Retention and surface blistering of helium irradiated tungsten as a first wall material von Gilliam, S.B., Gidcumb, S.M., Parikh, N.R., Forsythe, D.G., Patnaik, B.K., Hunn, J.D., Snead, L.L., Lamaze, G.P.

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Percutaneous lung ablation of pulmonary recurrence may improve survival in selected patients undergoing cytoreductive surgery for colorectal cancer with peritoneal carcinomatosis von Bin Traiki, T.A., Fisher, O.M., Valle, S.J., Parikh, R.N., Kozman, M.A., Glenn, D., Power, M., Liauw, W., Alzahrani, N.A., Morris, D.L.

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Single-crystal diamond plate liftoff achieved by ion implantation and subsequent annealing von PARIKH, N. R, HUNN, J. D, MCGUCKEN, E, SWANSON, M. L, WHITE, C. W, RUDDER, R. A, MALTA, D. P, POSTHILL, J. B, MARKUNAS, R. J

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Helium retention and surface blistering characteristics of tungsten with regard to first wall conditions in an inertial fusion energy reactor von Gilliam, S.B., Gidcumb, S.M., Forsythe, D., Parikh, N.R., Hunn, J.D., Snead, L.L., Lamaze, G.P.

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Epitaxial KNbO3 thin films on KTaO3, MgAl2O4, and MgO substrates von Chow, A. F., Lichtenwalner, D. J., Woolcott, R. R., Graettinger, T. M., Auciello, O., Kingon, A. I., Boatner, L. A., Parikh, N. R.

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Surface Characterization von McGuire, G. E, Swanson, Max L, Parikh, Nalin R, Simko, Steve, Weiss, P. S, Ferris, J. H, Nemanich, R. J, Chopra, D. R, Chourasia, A. R

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Studies on chemical bath deposited cadmium sulphide films by buffer solution technique von Dhere, N.G., Waterhouse, D.L., Sundaram, K.B., Melendez, O., Parikh, N.R., Patnaik, B.

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Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection von HUMPHREYS, T. P, CHANG, P. K, BEDAIR, S. M, PARIKH, N. R

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Transition between Ge segregation and trapping during high-pressure oxidation of GexSi1-x/Si von FREY, E. C, YU, N, PATNAIK, B, PARIKH, N. R, SWANSON, M. L, CHU, W. K

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Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy von POSTHILL, J. B, TARN, J. C. L, DAS, K, HUMPHREYS, T. P, PARIKH, N. R

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Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates von HUMPHREYS, T. P, MINER, C. J, POSTHILL, J. B, DAS, K, SUMMERVILLE, M. K, NEMANICH, R. J, SUKOW, C. A, PARIKH, N. R

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Heteroepitaxy and characterization of Ge-rich SiGe alloys on GaAs von VENKATASUBRAMANIAN, R, TIMMONS, M. L, MANTINI, M, KAO, C. T, PARIKH, N. R

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Epitaxial Cu contacts on semiconducting diamond von Baumann, P.K., Humphreys, T.P., Nemanich, R.J., Ishibashi, K., Parikh, N.R., Porter, L.M., Davis, R.F.

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Raman scattering characterization of strain in GaAs heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates von HUMPHREYS, T. P, POSTHILL, J. B, DAS, K, SUKOW, C. A, NEMANICH, R. J, PARIKH, N. R, MAJEED, A

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Growth of GaAs on high temperature hydrogen pretreated (100) Si substrates by molecular beam epitaxy von HUMPHREYS, T. P, DAS, K, POSTHILL, J. B, TARN, J. C. L, JAING, B. L, WORTMAN, J. J, PARIKH, N. R

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Exsanguination in a Jehovah's Witness von HARRIS, T. J. B., PARIKH, N. R., RAO, Y. K., OLIVER, R. H. P.

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Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy von Posthill, J. B., Markunas, R. J., Humphreys, T. P., Nemanich, R. J., Das, K., Parikh, N. R., Ross, P. L., Miner, C. J.

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Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulator von Das, K., Palmour, J.W., Posthill, J.B., Humphreys, T.P., O'Sullivan-French, J., Byrd, N.J., Lu, D., Wortman, J.J., Parikh, N.H.

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Surface Characterization von McGuire, G. E, Weiss, P. S, Kushmerick, J. G, Johnson, J. A, Simko, Steve J, Nemanich, R. J, Parikh, Nalin R, Chopra, D. R

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Molecular-beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide von DAS, K, HUMPHREYS, T. P, POSTHILL, J. B, TARN, J. C. L, WORTMAN, J. J, PARIKH, N. R

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