Silencing of GSTP1, a Prostate Cancer Prognostic Gene, by the Estrogen Receptor-β and Endothelial Nitric Oxide Synthase Complex von Re, A, Aiello, A, Nanni, S, Grasselli, A, Benvenuti, V, Pantisano, V, Strigari, L, Colussi, C, Ciccone, S, Mazzetti, A. P, Pierconti, F, Pinto, F, Bassi, P, Gallucci, M, Sentinelli, S, Trimarchi, F, Bacchetti, S, Pontecorvi, A, Lo Bello, M, Farsetti, A

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Estimation of fixed charge densities in hafnium-silicate gate dielectrics von Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

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A study of the leakage current in TiN/HfO2/TiN capacitors von Cimino, S., Padovani, A., Larcher, L., Afanas’ev, V.V., Hwang, H.J., Lee, Y.G., Jurczac, M., Wouters, D., Lee, B.H., Hwang, H., Pantisano, L.

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Towards barrier height modulation in HfO2/TiN by oxygen scavenging ― Dielectric defects or metal induced gap states? von PANTISANO, Luigi, AFANAS'EV, V. V, CIMINO, S, ADELMANN, C, GOUX, L, CHENA, Y. Y, KITTL, J. A, WOUTERS, D, JURCZAK, M

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Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode von Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J.

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs von Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

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Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients von Pantisano, L., Schram, T., Li, Z., Lisoni, J. G., Pourtois, G., De Gendt, S., Brunco, D. P., Akheyar, A., Afanas’ev, V. V., Shamuilia, S., Stesmans, A.

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Electron photoemission from conducting nitrides (TiNx,TaNx) into SiO2 and HfO2 von Afanas’ev, V. V., Stesmans, A., Pantisano, L., Schram, T.

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Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions von Thoan, N. H., Jivanescu, M., O'Sullivan, B. J., Pantisano, L., Gordon, I., Afanas'ev, V. V., Stesmans, A.

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Effective work function modulation by controlled dielectric monolayer deposition von Pantisano, L., Schram, T., O’Sullivan, B., Conard, T., De Gendt, S., Groeseneken, G., Zimmerman, P., Akheyar, A., Heyns, M. M., Shamuilla, S., Afanas’ev, V. V., Stesmans, A.

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Valence-band electron-tunneling measurement of the gate work function: Application to the high- κ /polycrystalline-silicon interface von Pantisano, Luigi, Afanas'ev, Valeri, Pourtois, Geoffrey, Chen, P. J.

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Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators von Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Schram, T., Pantisano, L.

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Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation von O'Sullivan, B.J., Kaushik, V.S., Everaert, J.-L., Trojman, L., Ragnarsson, L.-A., Pantisano, L., Rohr, E., DeGendt, S., Heyns, M.

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TiN x / HfO 2 interface dipole induced by oxygen scavenging von Afanas'ev, V. V., Stesmans, A., Pantisano, L., Cimino, S., Adelmann, C., Goux, L., Chen, Y. Y., Kittl, J. A., Wouters, D., Jurczak, M.

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Scaled X-bar TiN/HfO sub(2)/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode von Chen, Y Y, Goux, L, Pantisano, L, Swerts, J, Adelmann, C, Mertens, S, Afanasiev, V V, Wang, X P, Govoreanu, B, Degraeve, R, Kubicek, S, Paraschiv, V, Verbrugge, B, Jossart, N

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Electrostatic potential perturbation at the polycrystalline Si∕HfO2 interface von Afanas’ev, V. V., Stesmans, A., Pantisano, L., Chen, P. J.

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Internal photoemission of electrons from Ta-based conductors into SiO 2 and HfO 2 insulators von Shamuilia, S., Afanas'ev, V. V., Stesmans, A., Schram, T., Pantisano, L.

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A study of the leakage current in TiN/Hf02/TiN capacitors von CIMINO, S, PADOVANI, A, PANTISANO, L, LARCHER, L, AFANAS'EV, V. V, HWANG, H. J, LEE, Y. G, JURCZAC, M, WOUTERS, D, LEE, B. H, HWANG, H

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Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface von Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas’ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.

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Metal gate work function extraction using Fowler-Nordheim tunneling techniques von Sjöblom, G., Pantisano, L., Schram, T., Olsson, J., Afanas’ev, V., Heyns, M.

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