Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells von Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., Altimime, L.

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Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics von Kerber, A., Cartier, E., Pantisano, L., Degraeve, R., Kauerauf, T., Kim, Y., Hou, A., Groeseneken, G., Maes, H.E., Schwalke, U.

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Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions von Houssa, M., Pantisano, L., Ragnarsson, L.-Å., Degraeve, R., Schram, T., Pourtois, G., De Gendt, S., Groeseneken, G., Heyns, M.M.

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Low-frequency noise behavior of SiO2--HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness von Simoen, E, Mercha, A, Pantisano, L, Claeys, C, Young, E

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Estimation of fixed charge densities in hafnium-silicate gate dielectrics von Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

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Reliability screening of high- k dielectrics based on voltage ramp stress von Kerber, A., Pantisano, L., Veloso, A., Groeseneken, G., Kerber, M.

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Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks von Carter, R. J., Cartier, E., Kerber, A., Pantisano, L., Schram, T., De Gendt, S., Heyns, M.

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A study of the leakage current in TiN/HfO2/TiN capacitors von Cimino, S., Padovani, A., Larcher, L., Afanas’ev, V.V., Hwang, H.J., Lee, Y.G., Jurczac, M., Wouters, D., Lee, B.H., Hwang, H., Pantisano, L.

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On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices von Westlinder, J., Schram, T., Pantisano, L., Cartier, E., Kerber, A., Lujan, G.S., Olsson, J., Groeseneken, G.

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs von Severi, S., Pantisano, L., Augendre, E., San Andres, E., Eyben, P., De Meyer, K.

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A Study of Relaxation Current in High- $kappa$ Dielectric Stacks von Xu, Zhen, Pantisano, L, Kerber, A, Degraeve, R, Cartier, E, De Gendt, S, Heyns, M, Groeseneken, G

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Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks von Zhang, J.F., Mo Huai Chang, Zhigang Ji, Lin Lin, Ferain, I., Groeseneken, G., Pantisano, L., De Gendt, S., Heyns, M.M.

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Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100) von Trojman, L., Pantisano, L., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter? von Trojman, L., Pantisano, L., Dehan, M., Ferain, I., Severi, S., Maes, H.E., Groeseneken, G.

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Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients von Pantisano, L., Schram, T., Li, Z., Lisoni, J. G., Pourtois, G., De Gendt, S., Brunco, D. P., Akheyar, A., Afanas’ev, V. V., Shamuilia, S., Stesmans, A.

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Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode von Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J.

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Low-Frequency (1∕f) Noise Performance of n- and p-MOSFETs with Poly-Si∕Hf-Based Gate Dielectrics von Srinivasan, P., Simoen, E., Pantisano, L., Claeys, C., Misra, D.

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Electron photoemission from conducting nitrides (TiNx,TaNx) into SiO2 and HfO2 von Afanas’ev, V. V., Stesmans, A., Pantisano, L., Schram, T.

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Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni von Goux, L., Polspoel, W., Lisoni, J. G., Chen, Y.-Y, Pantisano, L., Wang, X.-P., Vandervorst, W., Jurczak, M., Wouters, D. J.

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs von Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

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