Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz von Pane-Chane Chao, Chu, Kenneth, Creamer, Carlton, Diaz, Jose, Yurovchak, Tom, Shur, Michael, Kallaher, Ray, McGray, Craig, Via, Glen David, Blevins, John D.

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Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization von Hong-Yeh Chang, Tian-Wei Huang, Wang, Huei, Yu-Chi Wang, Pane-Chane Chao, Chung-Hsu Chen

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A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks von Bosen Tzeng, Chun-Hsien Lien, Wang, Huei, Yu-Chi Wang, Pane-Chane Chao, Chung-Hsu Chen

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K-band HBT and HEMT monolithic active phase shifters using vector sum method von Po-Yu Chen, Tian-Wei Huang, Wang, Huei, Yu-Chi Wang, Chung-Hsu Chen, Pane-Chane Chao

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Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process von Chu, Kenneth K., Yurovchak, Thomas, Chao, Pane Chane, Creamer, Carlton T.

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50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages von Dong Xu, Kong, W.M.T., Xiaoping Yang, Mohnkern, L., Seekell, P., Mt. Pleasant, L., Duh, K.G., Smith, P.M., Pane-Chane Chao

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Very high efficiency V-band power InP HEMT MMICs von Kong, W.M.T., Wang, S.C., Pane-Chane Chao, Der-Wei Tu, Kuichul Hwang, Tang, O.S.A., Shih-Ming Liu, Pin Ho, Nichols, K., Heaton, J.

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Wideband medium power amplifiers using a short gate-length GaAs MMIC process von Morgan, M., Bryerton, E., Karimy, H., Dugas, D., Gunter, L., Kuanghann Duh, Xiaoping Yang, Smith, P., Chao, P.-C.

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Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology von Komiak, J. J., Kanin Chu, Chao, P. C.

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0.2-μm AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation von DONG XU, KANIN CHU, DIAZ, Jose, WENHUA ZHU, ROY, Richard, PLEASANT, Louis Mt, NICHOLS, Kirby, CHAO, Pane-Chane, MIN XU, YE, Peide D

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Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K von Pospieszalski, M.W., Weinreb, S., Pane-Chane Chao, Mishra, U.K., Palmateer, S.C., Smith, P.M., Hwang, J.C.M.

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High-performance Ka-band and V-band HEMT low-noise amplifiers von Duh, K.H.G., Pane-Chane Chao, Smith, P.M., Lester, L.F., Lee, B.R., Ballingall, J.M., Ming-Yih Kao

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0.2- mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al 2 O 3 Passivation von Xu, Dong, Chu, Kanin, Diaz, Jose, Zhu, Wenhua, Roy, Richard, Pleasant, Louis Mt, Nichols, Kirby, Chao, Pane-Chane, Xu, Min, Ye, Peide D

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0.2-[Formula Omitted] AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition [Formula Omitted] Passivation von Xu, Dong, Chu, Kanin, Diaz, Jose, Zhu, Wenhua, Roy, Richard, Pleasant, Louis Mt, Nichols, Kirby, Chao, Pane-Chane, Xu, Min, Ye, Peide D

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0.2- \mu AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation von Xu, Dong, Chu, Kanin, Diaz, Jose, Zhu, Wenhua, Roy, Richard, Pleasant, Louis Mt, Nichols, Kirby, Chao, Pane-Chane, Xu, Min, Ye, Peide D.

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Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs von Kao, M.-Y., Smith, P.M., Ho, P., Chao, P.-C., Duh, K.H.G., Jabra, A.A., Ballingall, J.M.

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Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs von Komiak, J. J., Lender, R. J., Kanin Chu, Chao, P. C.

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32-GHz cryogenically cooled HEMT low-noise amplifiers von Duh, K.H.G., Kopp, W.F., Ho, P., Chao, P.-C., Ko, M.-Y., Smith, P.M., Ballingall, J.M., Bautista, J.J., Ortiz, G.G.

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A 39-46 GHz MMIC HBT triple-push VCO using cascode configuration von Po-Yo Chen, Yu-Lung Tang, Wang, Huei, Yu-Chi Wang, Pane-Chane Chao, Chung-Hsu Chen

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An extremely low-noise InP-based HEMT with silicon nitride passivation von Ming-Yih Kao, Duh, K.H.G., Pin Ho, Pane-Chane Chao

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