A selective dry-etch technique for GaAs MESFET gate recessing von Chang, E.Y., Van Hove, J.M., Pande, K.P.

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Characteristics of MOS solar cells built on (n-type) InP substrates von Pande, K.P.

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Passivation of GaAs FET's with PECVD silicon nitride films of different stress states von Chang, E.Y., Cibuzar, G.T., Pande, K.P.

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High-speed integrated circuits based on InP-MISFETs with plasma SiO 2 gate insulator von Pande, K.P., Gutierrez, D.

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Ge 3 N 4 -InP MIS structures von Pande, K.P., Pourdavoud, S.

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Optical and electrical properties of some sulphates doped with cobalt von Radhakrishna, S., Pande, K.P.

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An optimal annealing technique for ohmic contacts to ion-implanted n-layers in semi-insulating indium phosphide von Pande, K.P., Martin, E., Gutierrez, D., Aina, O.

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High-speed integrated circuits based on InP-MISFETs with plasma SiO2 gate insulator von PANDE, K. P, GUTIERREZ, D

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Gigahertz logic gates based on InP-MISFET's with minimal drain current drift von Pande, K.P., Fathimulla, M.A., Gutierrez, D., Messick, L.

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Manufacturing cost analysis of optoelectronic integrated circuits von Schuelke, R.J., Pande, K.P.

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High-gain, V-band, low-noise MMIC amplifiers using pseudomorphic MODFETs von Metze, G.M., Bass, J.F., Lee, T.T., Cornfeld, A.B., Singer, J.L., Hung, H.-L., Huang, H.C., Pande, K.P.

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Ge3N4-InP MIS structures von Pande, K.P., Pourdavoud, S.

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3-mm double-heterojunction microwave power HEMT fabricated by selective RIE von Van Hove, J.M., Schuelke, R.J., Thomes, G.P., Jorgenson, J.D., Chang, E.Y., Nagarajan, R.M., Pande, K.P.

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Hybrid dry-wet chemical etching process for via holes for gallium arsenide MMIC manufacturing von Chang, E.Y., Nagarajan, R.M., Kryzak, C.J., Pande, K.P.

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Design and fabrication of 0.25- mu m MESFETs with parallel and pi -gate structures von Nagarajan, R.M., Van Hove, J.M., Rask, S.D., Thomas, G.P., Cibuzar, G.T., Jorgenson, J.D., Chang, E.Y., Pande, K.P.

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Interface characteristics of Ge 3N 4-( n-type) GaAs MIS devices von Pande, K.P., Chen, M.L., Yousuf, M., Lalevic, B.

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Photovoltaic measurements von Ashok, S., Pande, K.P.

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Interface characteristics of Ge3N4-(n-type) GaAs MIS devices von Pande, K.P., Chen, M.L., Yousuf, M., Lalevic, B.

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Optical properties of chromate ion in potassium sulphate crystals von Radhakrishna, S., Pande, K.P.

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Optical and electrical properties of some sulphates doped with cobalt von Radhakrishna, S., Pande, K.P.

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