Silicon photodiodes with high photoconductive gain at room temperature von Li, X, Carey, J E, Sickler, J W, Pralle, M U, Palsule, C, Vineis, C J

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Electrical and optical characterization of crystalline silicon/porous silicon heterojunctions von Palsule, C., Liu, S., Gangopadhyay, S., Holtz, M., Lamp, D., Kristiansen, M.

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Evidence for hole traps at the amorphous silicon/amorphous silicon–germanium heterostructure interface von Palsule, C., Paschen, U., Cohen, J. D., Yang, J., Guha, S.

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Experimental evidence for the applicability of an effective temperature concept in a-Si:H von Palsule, C, Yi, S, Gangopadhyay, S, Schmidt, U, Schröder, B

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Characterization of fluorinated hydrogenated amorphous silicon nitride ( a -SiN x :H) alloys von Shen, J. M., Palsule, C., Gangopadhyay, S., Naseem, H. A., Kizzar, S., Goh, Freddy H. C.

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Characterization of stain-etched porous silicon von Liu, S, Palsule, C, Yi, S, Gangopadhyay, S

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Electric field quenching of continuous wave photoluminescence in hydrogenated amorphous silicon von Yi, S., Palsule, C., Gangopadhyay, S., Schmidt, U., Schröder, B.

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Effect of light degradation on nanosecond photoluminescence decay in a-Si:H von Gangopadhyay, S., Palsule, C., Borst, W.

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Ultrafast laser processing of semiconductor devices von Carey, J. E., Pralle, M. U., Vineis, C. J., McKee, J., Alie, S., Sickler, J. W., Li, X., Jiang, J., Miller, D., Palsule, C., Haddad, H.

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Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs von Sauncy, T, Palsule, CP, Holtz, M, Gangopadhyay, S, Massie, S

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Cryogenic Pressure and Lifetime Studies of a Defect Related Emission in Heavily Silicon Doped GaAs von Holtz, M., Sauncy, T., Dallas, T., Seon, M., Palsule, C. P., Gangopadhyay, S., Massie, S.

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Intermolecular energy transfer in binary systems of dye polymers von Liu, Lin-I, Barashkov, Nikolay N., Palsule, Chintamani P., Gangopadhyay, Shubhra, Borst, Walter L.

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Photoluminescence characterization of a-Si1-xCx:H alloys prepared by cosputtering von PALSULE, C, GANGOPADHYAY, S, CRONAUER, D, SCHRÖDER, B

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Experimental Evidence for the Applicability of an Effective Temperature Concept in a − S i : H von Palsule, C., Yi, S., Gangopadhyay, S., Schmidt, U., Schröder, B.

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Fast photoluminescence decay in a-Si:H von PALSULE, C, GANGOPADHYAY, S, KHER, A, BORST, W, SCHMIDT, U, SCHEHR, B, SCHRÖDER, B

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Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small Pixels von Joy, T., Sunggyu Pyo, Sunghyung Park, Changhoon Choi, Palsule, C., Hyungjun Han, Chen Feng, Sangjoo Lee, McKee, J., Altice, P., Hong, C., Boemler, C., Hynecek, J., Louie, M., Juil Lee, Daebyung Kim, Haddad, H., Pain, B.

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Effect of light degradation on nanosecond photoluminescence decay in a-Si:H von GANGOAPDHYAY, S, PALSULE, C, BORST, W

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Electric field quenching of continuous wave photoluminescence in hydrogenated amorphous silicon von YI, S, PALSULE, C, GANGOPADHYAY, S, SCHMIDT, U, SCHRÖDER, B

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Photoluminescence characterization of a - Si 1 − x C x :H alloys prepared by cosputtering von Palsule, C., Gangopadhyay, S., Cronauer, D., Schröder, B.

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Spillover Effects of Mission Activities on Revenues in Nonprofit Health Care: The Case of Aravind Eye Hospitals, India von Gupta, Sachin, Palsule-Desai, Omkar D., Gnanasekaran, C., Ravilla, Thulasiraj

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