Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates von Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.

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Relationship between critical charge density, holding current, and maximum current density in optically triggered silicon carbide thyristors von Yuferev, V S, Levinshtein, M E, Palmour, J W

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Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures von Rumyantsev, S L, Shur, M S, Levinshtein, M E, Ivanov, P A, Palmour, J W, Agarwal, A K, Hull, B A, Ryu, Sei-Hyung

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Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Status and prospects for SiC power MOSFETs von Cooper, J.A., Melloch, M.R., Singh, R., Agarwal, A., Palmour, J.W.

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Diffusion of minority carriers against electric field (high injection level) von Gert, A. V., Dmitriev, A. P., Levinshtein, M. E., Yuferev, V. S., Palmour, J. W.

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Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures von Shuman, V B, Mnatsakanov, T T, Levinshtein, M E, Tandoev, A G, Yurkov, S N, Palmour, J W

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Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers von Palmour, J W, Levinshtein, M E, Ivanov, P A, Zhang, Q J

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Self-heating and loss of thermal stability under a single current surge pulse in high-voltage 4H-SiC rectifier diodes von Levinshtein, M E, Mnatsakanov, T T, Ivanov, P A, Palmour, J W, Das, M K, Hull, B A

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Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide von Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., Edmond, J.A.

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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide von Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Chanana, R.K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Holland, O.W., Das, M.K., Palmour, J.W.

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Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors von Mnatsakanov, T T, Yurkov, S N, Levinshtein, M E, Cheng, L, Palmour, J W

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SiC power Schottky and PiN diodes von Singh, R., Cooper, J.A., Melloch, M.R., Chow, T.P., Palmour, J.W.

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Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors von Yurkov, S N, Mnatsakanov, T T, Levinshtein, M E, Cheng, L, Palmour, J W

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Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors von Rumyantsev, S L, Levinshtein, M E, Shur, M S, Cheng, L, Agarwal, A K, Palmour, J W

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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices von McD. Hobgood, H., Das, Mrinal K., Paisley, Michael J., Skowronski, Marek, Sumakeris, Joseph J., Müller, Stephan G., Ha, Seo Young, Palmour, John W., Carter Jr, Calvin H.

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Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit von Rumyantsev, S L, Levinshtein, M E, Saxena, T, Shur, M S, Cheng, L, Palmour, J W, Agarwal, A

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Progress in SiC: from material growth to commercial device development von Carter, Jr, C.H., Tsvetkov, V.F., Glass, R.C., Henshall, D., Brady, M., Müller, St.G., Kordina, O., Irvine, K., Edmond, J.A., Kong, H.-S., Singh, R., Allen, S.T., Palmour, J.W.

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Insulator investigation on SiC for improved reliability von Lipkin, L.A., Palmour, J.W.

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