Fabrication of bond and etch-back silicon on insulator using a strained Si0.7Ge0.3 layer as an etch stop von GODBEY, D. J, TWIGG, M. E, HUGHES, H. L, PALKUTI, L. J, LEONOV, P, WANG, J. J

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Correlation between channel hot-electron degradation and radiation-induced interface trapping in N-channel LDD devices von Huang, D.H., King, E.E., Wang, J.J., Ormond, R., Palkuti, L.J.

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Radiation response of CMOS/SOI devices formed by wafer bond and etchback von Palkuti, L.J., Ling, P., Leonov, P., Kawayoshi, H., Ormond, R., Yuan, J.

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Recoil oxygen implants and thermal redistribution of oxygen in through-oxide arsenic-implanted Si von Magee, T. J., Leung, C., Kawayoshi, H., Palkuti, L. J., Furman, B. K., Evans, C. A., Christel, L. A., Gibbons, J. F., Day, D. S.

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Correlation between channel hot-electron degradation and radiation-induced interface trapping in MOS devices von Palkuti, L.J., Ormond, R.D., Hu, C., Chung, J.

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WP-A3 Application of CW argon laser annealing on fabricating short-channel PolySilicon-gate MOSFET's von Peng, J.D., Palkuti, L.J., Teng, T.C., Skinner, C.

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Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing von Magee, T. J., Palkuti, L. J., Ormond, R., Leung, C., Graham, S.

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A Simple and Efficient Switched-Mode Approach to Hardened Power Amplification von Palkuti, L. J., Kalinowski, J. J.

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Hardening Frequency Standards for Space Applications von Flanagan, T. M., Palkuti, L. J., Leadon, R. E., Bloom, G. E.

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Correlation between channel hot-electron degradation andradiation-induced interface trapping in MOS devices von Palkuti, L J, Ormond, R D, Hu, C, Chung, J

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X-Ray Wafer Probe for Total Dose Testing von Palkuti, Leslie J., LePage, James J.

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40th Electronic components and technology conference: selected papers, Las Vegas Nevada, May 21-23, 1990 von SCHLOUGH, S, PALKUTI, L. J

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Selected papers/33rd. Electronic components conference, Orlando FL, May 16-18, 1983 von FEINSTEIN, L, PALKUTI, L. J

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Contributions/37th. Electronic components conference, Boston MA, May 11-13, 1987 von LOESCHER, D. H, PALKUTI, L. J

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Characterization of hot-carrier-induced degradation in p-channel MOSFETs by total injected charge techniques von Di-Hui Huang, King, E.E., Palkuti, L.J.

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Selected papers/36th. Electronic components conference, Seattle WA, May 5-7, 1986 von GEDNEY, R. W, PALKUTI, L. J

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Contributions/35th. Electronic components conference, Washington DC, May 20-22, 1985 von GEDNEY, R. W, PALKUTI, L. J

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Instrument for Radiation Testing/Screening Electronic Devices over an Extended Temperature Range von Palkuti,L J, Pugh,M A

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Scanning Photovoltage Technique for High Resolution Non-Destructive Characterization of Semiconductor Wafers von Palkuti,L J, Milgram,A A

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Ultra-High Upset, Megarad-Hard Si-Gate CMOS/SOS Code Generator von Palkuti, L. J., Kaiser, H. W., Pridgen, J. I., Wilson, B. J.

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