On the application of the tolerance factor to inorganic and hybrid halide perovskites: a revised system von Travis, W, Glover, E N K, Bronstein, H, Scanlon, D O, Palgrave, R G

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Resonant X-ray photoelectron spectroscopy: identification of atomic contributions to valence states von Seymour, J. M, Gousseva, E, Bennett, R. A, Large, A. I, Held, G, Hein, D, Wartner, G, Quevedo, W, Seidel, R, Kolbeck, C, Clarke, C. J, Fogarty, R. M, Bourne, R. A, Palgrave, R. G, Hunt, P. A, Lovelock, K. R. J

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Unravelling the complex speciation of halozincate ionic liquids using X-ray spectroscopies and calculations von Seymour, J M, Gousseva, E, Towers Tompkins, F K, Parker, L G, Alblewi, N O, Clarke, C J, Hayama, S, Palgrave, R G, Bennett, R A, Matthews, R P, Lovelock, K R J

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Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2 von Råsander, M., Quirk, J. B., Wang, T., Mathew, S., Davies, R., Palgrave, R. G., Moram, M. A.

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Evaluation of the thermal stability of TiW/Cu heterojunctions using a combined SXPS and HAXPES approach von Kalha, C., Reisinger, M., Thakur, P. K., Lee, T.-L., Venkatesan, S., Isaacs, M., Palgrave, R. G., Zechner, J., Nelhiebel, M., Regoutz, A.

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Electronic and surface properties of Ga-doped In2O3 ceramics von Regoutz, A., Egdell, R.G., Morgan, D.J., Palgrave, R.G., Téllez, H., Skinner, S.J., Payne, D.J., Watson, G.W., Scanlon, D.O.

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Band gap and electronic structure of MgSiN2 von Quirk, J. B., Råsander, M., McGilvery, C. M., Palgrave, R., Moram, M. A.

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Identification of the Mechanism of Electrocatalytic Ozone Generation on Ni/Sb-SnO2 von Christensen, P. A, Attidekou, P. S, Egdell, R. G, Maneelok, S, Manning, D. A. C, Palgrave, R

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Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111) von Zhang, K. H. L, Payne, D.J, Palgrave, R. G, Lazarov, V. K, Chen, W, Wee, A. T. S, McConville, C. F, King, P. D. C, Veal, T. D, Panaccione, G, Lacovig, P, Egdell, R. G

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Visible light photocatalysis by metal-to-metal charge transfer for degradation of methyl orange von Ireland, C P, Palgrave, R G, Bennett, S C, Smith, AWJ, Clark, J H, Darwent, JR, Claridge, J B, Poulston, S, Rosseinsky, MJ

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Valence States in CeVO4 and Ce0.5Bi0.5VO4 Probed by Density Functional Theory Calculations and X‑ray Photoemission Spectroscopy von Allen, J. P, Galea, N. M, Watson, G. W, Palgrave, R. G, Kahk, J. M, Payne, D. J, Robinson, M. D. M, Field, G, Regoutz, A, Egdell, R. G

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Valence band offsets of ScxGa1−xN/AlN and ScxGa1−xN/GaN heterojunctions von Tsui, H C L, Goff, L E, Palgrave, R G, Beere, H E, Farrer, I, Ritchie, D A, Moram, M A

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Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy von BOURLANGE, A, PAYNE, D. J, PALGRAVE, R. G, FOORD, J. S, EGDELL, R. G, JACOBS, RM. J, SCHERTEL, A, HUTCHISON, J. L, DOBSON, P. J

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Composition measurement of epitaxial ScxGa1−xN films von Tsui, H C L, Goff, L E, Barradas, N P, Alves, E, Pereira, S, Palgrave, R G, Davies, R J, Beere, H E, Farrer, I, Ritchie, D A, Moram, M A

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SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition von Yan, L., Xu, Z. L., Grygiel, C., McMitchell, S. R. C., Suchomel, M. R., Bacsa, J., Clark, J. H., Niu, H. J., Romani, S., Palgrave, R. G., Chalker, P. R., Rosseinsky, M. J.

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Electronic Structure of Epitaxial Sn-Doped Anatase Grown on SrTiO3(001) by Dip Coating von Oropeza, F. E, Zhang, K. H. L, Palgrave, R. G, Regoutz, A, Egdell, R. G, Allen, J. P, Galea, N. M, Watson, G. W

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Hybrid Aerosol Assisted and Atmospheric Pressure CVD of Gold-Doped Vanadium Dioxide von Binions, R., Piccirillo, C., Palgrave, R. G., Parkin, I. P.

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Epitaxial growth and enhanced conductivity of an IT-SOFC cathode based on a complex perovskite superstructure with six distinct cation sites von Sayers, R, Flack, NLO, Alaria, J, Chater, P A, Palgrave, R G, McMitchell, SRC, Romani, S, Ramasse, Q M, Pennycook, T J, Rosseinsky, MJ

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Facile synthesis of mesoporous VO2 nanocrystals by a cotton-template method and their enhanced thermochromic properties von Wu, Shaowen, Tian, Shouqin, Liu, Baoshun, Tao, Haizheng, Zhao, Xiujian, Palgrave, R.G., Sankar, G., Parkin, I.P.

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The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy von Bourlange, A., Payne, D. J., Palgrave, R. G., Zhang, H., Foord, J. S., Egdell, R. G., Jacobs, R. M. J., Veal, T. D., King, P. D. C., McConville, C. F.

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