An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses von Lu, Z G, Liu, J R, Poole, P J, Raymond, S, Barrios, P J, Poitras, D, Pakulski, G, Grant, P, Roy-Guay, D

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Quantum dot multi-wavelength lasers for Tbit/s coherent communications and 5G wireless networks -INVITED von Lu, Z.G., Liu, J.R., Mao, Y.X., Zeb, K., Liu, G.C., Webber, J., Rahim, M., Pakulski, G., Song, C.Y., Vachon, M., Barrios, P., Poitras, D., Wang, S.R., Jiang, W.H., Poole, P.

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High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser von LU, Z. G, POOLE, P. J, LIU, J. R, BARNOS, P. J, JIAO, Z. J, PAKULSKI, G, POITRAS, D, GOODCHILD, D, RIOUX, B, SPRINGTHORPE, A. J

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External cavity InAs ∕ InP quantum dot laser with a tuning range of 166 nm von Ortner, G., Allen, C. Ni, Dion, C., Barrios, P., Poitras, D., Dalacu, D., Pakulski, G., Lapointe, J., Poole, P. J., Render, W., Raymond, S.

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Highly efficient non-degenerate four-wave mixing process in InAs/InGaAsP quantum dots von LU, Z. G, LIU, J. R, RAYMOND, S, POOLE, P. J, BARRIOS, P. J, POITRAS, D, SUN, F. G, PAKULSKI, G, BOCK, P. J, HALL, T

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Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser von LIU, J, LU, Z, RAYMOND, S, POOLE, P. J, BARRIOS, P. J, PAKULSKI, G, POITRAS, D, XIAO, G, ZHANG, Z

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External-cavity quantum-dot laser tunable through 1.55 μ m von Allen, C. Nì., Ortner, G., Dion, C., Poole, P. J., Barrios, P., Lapointe, J., Pakulski, G., Render, W., Fafard, S., Raymond, S.

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Global and local effects in gain-coupled multiple-quantum-well DFB lasers von Champagne, A., Maciejko, R., Adams, D.M., Pakulski, G., Takasaki, B., Makino, T.

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External cavity quantum dot tunable laser through 1.55 μm von Allen, C.Nì., Poole, P.J., Barrios, P., Marshall, P., Pakulski, G., Raymond, S., Fafard, S.

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Semi-insulating buried heterostructure laser with PN fence von Pakulski, G., Knight, G., Das, S.R., Jones, T., Blaauw, C., White, J.K.

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Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5μm von Jiao, Z.J., Lu, Z.G., Liu, J.R., Poole, P.J., Barrios, P.J., Poitras, D., Pakulski, G., Caballero, J., Zhang, X.P.

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Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.5 Amm von Jiao, Z J, Lu, Z G, Liu, J R, Poole, P J, Barrios, P J, Poitras, D, Pakulski, G, Caballero, J, Zhang, X P

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High-performance 1.52 µm InAs/InP quantum dot distributed feedback laser von Lu, Z.G., Poole, P.J., Liu, J.R., Barrios, P.J., Jiao, Z.J., Pakulski, G., Poitras, D., Goodchild, D., Rioux, B., SpringThorpe, A.J.

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Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm von Gupta, J. A., Barrios, P. J., Caballero, J. A., Poitras, D., Aers, G. C., Pakulski, G., Wu, X.

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High-performance 1.52 [mu]m InAs/InP quantum dot distributed feedback laser von Lu, Z G, Poole, P J, Liu, J R, Barrios, P J, Jiao, Z J, Pakulski, G, Poitras, D, Goodchild, D, Rioux, B, SpringThorpe, A J

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High-performance 1.52 mu m InAs/InP quantum dot distributed feedback laser von Lu, Z G, Poole, P J, Liu, J R, Barrios, P J, Jiao, Z J, Pakulski, G, Poitras, D, Goodchild, D, Rioux, B, SpringThorpe, A J

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Intrinsic Dynamic Properties of High-Characteristic Temperature GaInNAs Laser Diodes Operating at 1.3 \mum von Xia Zhang, Gupta, J.A., Barrios, P.J., Pakulski, G., Hall, T.J.

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Intrinsic Dynamic Properties of High-Characteristic Temperature GaInNAs Laser Diodes Operating at 1.3 $\mu$m von Zhang, Xia, Gupta, James A., Barrios, Pedro J., Pakulski, Greg, Hall, Trevor J.

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Ellagic acid derivatives and naphthoquinones of Dionaea muscipula from in vitro cultures von Pakulski, Grzegorz, Budzianowski, Jaromir

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Gain spectra of 1.3 μ m GaInNAs laser diodes von Zhang, X., Gupta, J. A., Barrios, P. J., Pakulski, G., Wu, X., Delâge, A.

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