Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks von Essa, Z., Gaumer, C., Pakfar, A., Gros-Jean, M., Juhel, M., Panciera, F., Boulenc, P., Tavernier, C., Cristiano, F.

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Continuum simulation of solid phase epitaxial regrowth of amorphized silicon including most advanced physical interactions von Delalleau, Julien, Pakfar, Ardechir, Bazizi, El-Medhi, Simola, Roberto, Tavernier, Clement

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Overlayer stress effects on defect formation in Si and Ge von Cowern, Nick E.B., Bennett, Nick S., Ahn, Chihak, Yoon, Joo Chul, Hamm, Silke, Lerch, Wilfried, Kheyrandish, Hamid, Cristiano, Filadelfo, Pakfar, Ardechir

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Precipitation of Antimony Implanted into Silicon von Koffel, Stephane, Pichler, Peter, Reading, Michael A., Van den Berg, Jakob, Kheyrandish, Hamid, Hamm, Silke, Lerch, Wilfried, Pakfar, Ardechir, Tavernier, Clement

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Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals von Cristiano, Fuccio, Fazzini, Pier Francesco, Pakfar, Ardechir, Boninelli, Simona, Bazizi, El Mehdi, Paul, Silke, Lerch, Wilfried, Duffy, Ray

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Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping von Webb, Roger P., Colombeau, Benjamin, Smith, Andrew J., Pakfar, Ardechir, Sealy, Brian J., Paul, Silke, Cowern, Nicholas E.B., Bennett, Nicholas S., Lerch, Wilfried, Gwilliam, Russell

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Thick FDSOI source-drain improvement von Pakfar, Ardechir, Muehlhoff, Armin, Richter, Marcel

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THICK FDSOI SOURCE-DRAIN IMPROVEMENT von Pakfar, Ardechir, Muehlhoff, Armin, Richter, Marcel

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Methods for fabricating integrated circuits with robust gate electrode structure protection von THURMER DOMINIC, WASYLUK JOANNA, LENSKI MARKUS, PAKFAR ARDECHIR

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Gate silicidation von THURMER DOMINIC, FITZ CLEMENS, PATZER JOACHIM, PAKFAR ARDECHIR

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METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH ROBUST GATE ELECTRODE STRUCTURE PROTECTION von THURMER DOMINIC, WASYLUK JOANNA, LENSKI MARKUS, PAKFAR ARDECHIR

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GATE SILICIDATION von THURMER DOMINIC, FITZ CLEMENS, PATZER JOACHIM, PAKFAR ARDECHIR

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Gate silicidation von THURMER DOMINIC, FITZ CLEMENS, PATZER JOACHIM, PAKFAR ARDECHIR

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Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regions von REIMER BERTHOLD, HAUSSDOERFER BASTIAN, LENSKI MARKUS, PAKFAR ARDECHIR

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METHODS OF FORMING A SEMICONDUCTOR DEVICE BY PERFORMING A WET ACID ETCHING PROCESS WHILE PREVENTING OR REDUCING LOSS OF ACTIVE AREA AND/OR ISOLATION REGIONS von REIMER BERTHOLD, HAUSSDOERFER BASTIAN, LENSKI MARKUS, PAKFAR ARDECHIR

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Method of forming a semiconductor device employing an optical planarization layer von THURMER DOMINIC, HAUSSDOERFER BASTIAN, WEISHEIT MARTIN, PATZER JOACHIM, PAKFAR ARDECHIR, WANG CHIHUN, RIVIERE REMI, MELZER ROBERT

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METHOD OF FORMING A SEMICONDUCTOR DEVICE EMPLOYING AN OPTICAL PLANARIZATION LAYER von THURMER DOMINIC, HAUSSDOERFER BASTIAN, WEISHEIT MARTIN, PATZER JOACHIM, PAKFAR ARDECHIR, WANG CHIHUN, RIVIERE REMI, MELZER ROBERT

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PROTECTION OF THE GATE STACK ENCAPSULATION von DILLIWAY GABRIELA, THURMER DOMINIC, LENSKI MARKUS, PAKFAR ARDECHIR, TRIYOSO DINA H

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Clustering of Antimony Implanted in Silicon von Koffel, Stephane, Pichler, Peter, Reading, Michael, Van den Berg, Jakob, Kheyrandish, Hamid, Hamm, Silke, Lerch, Wilfried, Pakfar, Ardechir, Tavernier, Clement

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Extended point defects in crystalline materials: Ge and Si von Cowern, Nick E B, Simdyankin, Sergei, Ahn, Chihak, Bennett, Nick S, Goss, Jonathan P, Hartmann, Jean-Michel, Pakfar, Ardechir, Hamm, Silke, Valentin, Jérôme, Napolitani, Enrico, De Salvador, Davide, Bruno, Elena, Mirabella, Salvatore

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