Structure of the carrot defect in 4H-SiC epitaxial layers von Benamara, M., Zhang, X., Skowronski, M., Ruterana, P., Nouet, G., Sumakeris, J. J., Paisley, M. J., O'Loughlin, M. J.

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Driving force of stacking-fault formation in SiC p-i-n diodes von Ha, S, Skowronski, M, Sumakeris, J J, Paisley, M J, Das, M K

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Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy von Zhang, X., Skowronski, M., Liu, K. X., Stahlbush, R. E., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

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Exploration of bulk and epitaxy defects in 4H-SiC using large scale optical characterization von Leonard, R. T., Paisley, M. J., Bubel, S., Sumakeris, J. J., Powell, A. R., Khlebnikov, Y., Seaman, J. C., Ambati, J., Burk, A. A., O'Loughlin, M. J., Balkas, E.

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Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices von Ha, Seo Young, Skowronski, Marek, Sumakeris, Joseph J., McD. Hobgood, H., Paisley, Michael J., Carter Jr, Calvin H., Palmour, John W., Müller, Stephan G., Das, Mrinal K.

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Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers von Huh, S. W., Chung, H. J., Benamara, M., Skowronski, M., Sumakeris, J. J., Paisley, M. J.

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Stacking fault formation in SiC p-i-n diodes of (11-20) orientation von Ha, S., Hu, K., Skowronski, M., Sumakeris, J. J., Paisley, M. J., Das, M. K.

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Spheroid 3C inclusions in 8° off-axis 4H-SiC epilayers grown by chemical vapor deposition von Zhang, X., Li, L., Skowronski, M., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

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100 mm 4HN-SiC Wafers with Zero Micropipe Density von Leonard, R.T., Paisley, Michael J., Khlebnikov, I., Hobgood, H.McD, Carter Jr, Calvin H., Powell, Adrian R., Basceri, C., Brady, M.F., Zilli, R., Jenny, Jason R., Balakrishna, Vijay, Khlebnikov, Y., Malta, D.P., Tsvetkov, Valeri F., Deyneka, E.

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Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition von Zhang, X., Ha, S., Hanlumnyang, Y., Chou, C. H., Rodriguez, V., Skowronski, M., Sumakeris, J. J., Paisley, M. J., O’Loughlin, M. J.

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Defects in SiC substrates and epitaxial layers affecting semiconductor device performance von Müller, St. G., Sumakeris, J. J., Brady, M. F., Glass, R. C., Hobgood, H. McD, Jenny, J. R., Leonard, R., Malta, D. P., Paisley, M. J., Powell, A. R., Tsvetkov, V. F., Allen, S. T., Das, M. K., Palmour, J. W., Carter, C. H.

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High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift von Powell, Adrian R., Sumakeris, Joseph J., Paisley, Michael J., Das, Mrinal K.

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Defect Status in SiC Manufacturing von Leonard, R.T., Paisley, Michael J., Hobgood, H.McD, Carter Jr, Calvin H., Powell, Adrian R., Basceri, C., Brady, M.F., Burk, Albert A., Balkas, C., Khlebnikov, I., Sumakeris, Joseph J., Balakrishna, Vijay, Khlebnikov, Y., Malta, D.P., Tsvetkov, Valeri F., Berkman, Elif, O'Loughlin, Michael J., Deyneka, E.

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Molecular beam epitaxy of nitride thin films von Paisley, M.J., Davis, R.F.

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Bulk Growth of Large Area SiC Crystals von Deyneka, Eugene, Seaman, Jeff, Dudley, Michael, Leonard, R.T., Ambati, Jyothi, Balkas, Elif, Khlebnikov, Yuri, Powell, Adrian R., Kramarenko, Olek, Guo, J.Q., McClure, Andy, O’Loughlin, M., Sumakeris, Joseph J., Sakhalkar, Varad, Paisley, Michael J., Tsevtkov, V., Burk, Albert A., Horton, Chris, Gangwal, Sumit

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Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition von Kordina, Olof, Sumakeris, Joseph J., Paisley, Michael J., Kong, H.S., Carter Jr, Calvin H., Irvine, Kenneth G.

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SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers von Burk, Albert A., Paisley, Michael J., Leonard, R.T., O'Loughlin, Michael J., Powell, Adrian R., McClure, D.A., Brady, M.F.

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Structure of Carrot Defects in 4H-SiC Epilayers von Ha, Seo Young, Skowronski, Marek, Sumakeris, Joseph J., Paisley, Michael J., Ryu, Sei Hyung, Benamara, M., O'Loughlin, Michael J., Zhang, X.

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Boron nitride thin films by microwave ECR plasma chemical vapor deposition von Paisley, M.J., Bourget, L.P., Davis, R.F.

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Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment von Sitar, Z., Paisley, M. J., Smith, D. K., Davis, R. F.

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