Defects and nanocrystals generated by Si implantation into a-SiO2 von Nicklaw, C J, Pagey, M P, Pantelides, S T, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, J E, Howard, B M, Taw, E, McNeil, W H

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TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs von Milanowski, R.J., Pagey, M.P., Massengill, L.W., Schrimpf, R.D., Wood, M.E., Offord, B.W., Graves, R.J., Galloway, K.F., Nicklaw, C.J., Kelley, E.P.

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A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction von Pagey, M.P., Schrimpf, R.D., Galloway, K.F., Nicklaw, C.J., Ikeda, S., Kamohara, S.

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Combined effect of X-irradiation and forming gas anneal on the hot-carrier response of MOS oxides von Milanowski, R.J., Pagey, M.P., Matta, A.I., Bhuva, B.L., Massengill, L.W., Kerns, S.E.

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Comparison of forming gas, nitrogen, and vacuum anneal effects on X-ray irradiated MOSFETs von Pagey, M.P., Milanowski, R.J., Henegar, K.T., Bhuva, B.L., Kerns, S.E.

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Low Power, High-Speed Radiation Hardened Computer & Flight Experiment von Czajkowski, D.R., Pagey, M.P., Samudrala, P.K., Goksel, M., Viehman, M.J.

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Defects and nanocrystals generated by Si implantation into a-SiO (2) von Nicklaw, C J, Pagey, M P, Pantelides, S T, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, J E, Howard, B M, Taw, E, McNeil, W H, Conley, J F

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Defects and nanocrystals generated by Si implantation into a-SiO sub(2) von Nicklaw, C J, Pagey, M P, Pantelides, ST, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Wittig, JE, Howard, B M, Taw, E, McNeil, W H, Conley, JF Jr

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TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations von Mukundan, S. K., Pagey, M. P., Cirba, C. R., Schrimpf, R. D., Galloway, K. F.

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