Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering von IYER, S. S, TSANG, J. C, COPEL, M. W, PUKITE, P. R, TROMP, R. M

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Diffraction from stepped surfaces: II. Arbitrary terrace distributions von Pukite, P.R., Lent, C.S., Cohen, P.I.

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Multilayer step formation after As adsorption on Si(100): nucleation of GaAs on vicinal Si von PUKITE, O. R, COHEN, P. I

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Properties of diamond structure SnGe films grown by molecular beam epitaxy von Harwit, Alex, Pukite, P.R., Angilello, J., Iyer, S.S.

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Ion beam enhanced diffusion of B during Si molecular beam epitaxy von PUKITE, P. R, IYER, S. S, SCILLA, G. J

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Sensitive reflection high-energy electron diffraction measurement of the local misorientation of vicinal GaAs surfaces von PUKITE, P. R, VAN HOVE, J. M, COHEN, P. I

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The meandering of steps on GaAs(100) von Pukite, P.R., Petrich, G.S., Batra, S., Cohen, P.I.

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Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy von Pukite, P.R., Cohen, P.I.

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Birth-death models of epitaxy: I. Diffraction oscillations from low index surfaces von Cohen, P.I., Petrich, G.S., Pukite, P.R., Whaley, G.J., Arrott, A.S.

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Defect cluster analysis for wafer-scale integration von Pukite, P.R., Berman, C.L.

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On the origin of RHEED intensity oscillations von Petrich, G.S., Pukite, P.R., Wowchak, A.M., Whaley, G.J., Cohen, P.I., Arrott, A.S.

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Growth of abrupt Ge layers in Si (100) von Iyer, S.S., Pukite, P.R., Tsang, J.C., Copel, M.W.

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Determination of surface step distributions on Ge using RHEED von Cohen, P.I., Pukite, P.R.

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Shot noise in solid state diodes von van der Ziel, Alder, Anderson, James B., Birbas, Alexis N., Chen, Wei C., Peng Fang, Hietala, Vincent M., Park, Chin Sup, Pukite, Paul R., Toups, Michael F., Xiaolan Wu, Jingming Xu, Young, Alister C.

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Molecular beam epitaxy of metastable, diamond structure Sn x Ge1− x alloys von Pukite, P. R., Harwit, Alex, Iyer, S. S.

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Molecular beam epitaxy of metastable, diamond structure SnxGe1-x alloys von PUKITE, P. R, HARWIT, A, IYER, S. S

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Digital signal processors for computation intensive statistics and simulation von Pukite, P. R., Pukite, J.

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Expert system for redundancy and reconfiguration management von Pukite, P.R., Pukite, J., Barnhart, D.S.

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FROM THERMODYNAMICS TO QUANTUM WIRES: A REVIEW OF REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION von Cohen, P. I., Petrich, G. S., Dabiran, A. M., Pukite, P. R.

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DIFFRACTION STUDIES OF EPITAXY: ELASTIC, INELASTIC AND DYNAMIC CONTRIBUTIONS TO RHEED von Neave, J. H, Arrott, A. S

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