GaP-AlGaP heterojunction photosensors with photosensitivity maximum at 380–420 nm von Prutskij, T.A., Andreev, V.M., Larionov, V.R.

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Characterization of GaAs liquid-phase epitaxy layers grown in a BN boat von Prutskij, T.A., Ilinskii, A.I., Andrade, F.Silva, Chavez, F., Arencibia, P.Diaz

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Some evidences of ordering in InGaP layers grown by liquid phase epitaxy von Prutskij, T.A, Dı́az-Arencibia, P, Mintairov, A, Merz, J, Kosel, T

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Low-temperature LPE technique for the performance of visible AlGaAs (SC) lasers von Díaz, P., Prutskij, T. A., López, F.

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Investigation of LPE Ga1-xAlxAs/GaAs laser structures by double crystal diffractometry von BOCCHI, C, FERRARI, C, FRANZOSI, P, SCAFFARDI, M, DIAZ, P, RODRIGUEZ, J. G, PRUTSKIJ, T. A

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Characteristics of GaAsAlGaAs (SCH) lasers grown by low-temperature LPE technique von Diaz, P., Prutskij, T. A., Sanchez, M., Larionov, V. R., Khvostikov, V. P.

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Micro-Raman Studies of AlxGa1-xP/GaP Graded Structures von Zamora, E., Díaz, P., Jiménez-Sandoval, S., González-Raña, C., Prutskij, T.A., Mishurni, V., Merkulov, A.

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Cavity length dependence of the peak conversion efficiency in AlGaAs lasers von Sánchez, M., Camps, I., González, J. C., Díaz, P., Prutskij, T. A.

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Some evidences of ordering in InGaP layers grown by liquid phase epitaxy von PRUTSKIJ, T. A, DIAZ-ARENCIBIA, P, MINTAIROV, A, MERZ, J, KOSEL, T

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The pAl0.7Ga0.3As-pGaAs-nGaAs concentrator cell with electrolytical contacts von Prutskij, T. A., Purón, E., Rodríguez, J. A., Romero, R., DeRoux, S.

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The pAl 0.7 Ga 0.3 As‐pGaAs‐nGaAs concentrator cell with electrolytical contacts von Prutskij, T. A., Purón, E., Rodríguez, J. A., Romero, R., DeRoux, S.

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X-Ray double crystal rocking curves of Ga1−x Al x As/GaAs laser structures von Bocchi, C., Ferrari, C., Franzosi, P., Scaffardi, M., Diaz, P., Rodriguez, J. G., Prutskij, T. A.

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X-Ray double crystal rocking curves of Ga1-xAlxAs/GaAs laser structures von BOCCHI, C, FERRARI, C, FRANZOSI, P, SCAFFARDI, M, DIAZ, P, RODRIGUEZ, J. G, PRUTSKIJ, T. A

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Optical study of clustering in III-V semiconductor quaternary solid solutions von Prutskij, Tatiana, Seredin, Pavel

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Phase transformations in a human tooth tissue at the initial stage of caries von Seredin, Pavel, Goloshchapov, Dmitry, Prutskij, Tatiana, Ippolitov, Yury

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Experimental and Theoretical Study of Fluorescent Properties of Morin von Deriabina, Alexandra, Prutskij, Tatiana, Castillo Trejo, Leticia, Sanchez Gutierrez, Maria Patricia, Gonzalez Jimenez, Eduardo

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Excited-state proton transfer based fluorescence in Kaempferol powder and solutions with different concentrations von Prutskij, T., Deriabina, A., Vázquez Leon, G.D., Castillo Trejo, L.

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High linear polarization of photoluminescence of GaInP epilayers at low temperature von Prutskij, T., Seredin, P., Attolini, G.

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The effect of temperature on the linear polarization of the photoluminescence of an ordered AlGaInP semiconductor alloy von Prutskij, T., Seredin, P., Attolini, G.

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Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys von Prutskij, T., Makarov, N., Attolini, G.

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