Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C von Neudeck, Philip G., Spry, David J., Liangyu Chen, Prokop, Norman F., Krasowski, Michael J.

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Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages von Neudeck, Philip G., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu, Spry, David J.

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CIB: An Improved Communication Architecture for Real-Time Monitoring of Aerospace Materials, Instruments, and Sensors on the ISS von Spina, Danny C., Neudeck, Philip G., Jenkins, Phillip P., Greer, Lawrence C., Flatico, Joseph M., Prokop, Norman F., Krasowski, Michael J., Chen, Liangyu

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C von NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect von Beheim, Glenn M., Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Spry, David J., Lukco, Dorothy, Chen, Liang Yu

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits von Spry, David J., Chen, Liang Yu, Lukco, Dorothy, Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Beheim, Glenn M.

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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry von Spry, David J., Krasowski, Michael J., Chen, Liang Yu, Meredith, Roger D., Neudeck, Philip G., Chang, Carl W., Prokop, Norman F., Ferrier, Terry L., Beheim, Glenn M., Evans, Laura J., Okojie, Robert S.

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MISSE7: Building a Permanent Environmental Testbed for the International Space Station von Jenkins, Phillip P, Walters, Robert J, Krasowski, Michael J, Chapman, John J, Ballard, Perry G, Vasquez, John A, Mahony, Denis R, Lacava, Susie N, Braun, William R, Skalitzky, Robert, Prokop, Norman F, Flatico, Joseph M, Greer, Lawrence C, Gibson, Karen B, Kinard, William H, Pippin, H Gary

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox von Neudeck, P.G., Spry, D.J., Liang-Yu Chen, Beheim, G.M., Okojie, R.S., Chang, C.W., Meredith, R.D., Ferrier, T.L., Evans, L.J., Krasowski, M.J., Prokop, N.F.

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Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits von Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Prokop, Norman F., Beheim, Glenn M., Chen, Liang-Yu, Chang, Carl W.

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Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C von Neudeck, Philip G., Prokop, Norman F., Krasowski, Michael J., Chen, Liang Yu

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Low Earth Orbit Space Environment Testing of Extreme Temperature 6H-SiC JFETs on the International Space Station von Neudeck, Philip G., Prokop, Norman F., Greer III, Lawrence C., Krasowski, Michael J., Chen, Liang Yu

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Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150'C to +500'C von Neudeck, Philip G, Krasowski, Michael J, Chen, Liang-Yu, Prokop, Norman F

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Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology von Neudeck, Philip G., Spry, David J., Krasowski, Michael J., Chang, Carl W., Gonzalez, José M., Rajgopal, Srihari, Prokop, Norman F., Greer, Lawrence C., Lukco, Dorothy, Maldonado-Rivera, Shamir, Adams, Christina M.

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Prolonged 500 deg C operation of 6H-SiC JFET integrated circuitry von Neudeck, Philip G, Spry, David J, Chen, Liang-Yu, Chang, Carl W, Beheim, Glenn M, Okojie, Robert S, Evans, Laura J, Meredith, Roger D, Ferrier, Terry L, Krasowski, Michael J, Prokop, Norman F

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High speed edge detection von Prokop Norman F

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High Speed Edge Detection von Prokop, Norman F

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Method and apparatus for in-situ health monitoring of solar cells in space von Krasowski, Michael J, Prokop, Norman F

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High Speed Edge Detection von Prokop, Norman F

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High speed edge detection von PROKOP NORMAN F

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