Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon von Zhang, Kailing, Li, Xinxin, Dai, Weitao, Toor, Fatima, Prineas, J. P

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Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices von Murray, L.M., Lokovic, K.S., Olson, B.V., Yildirim, A., Boggess, T.F., Prineas, J.P.

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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice von Olson, B. V., Shaner, E. A., Kim, J. K., Klem, J. F., Hawkins, S. D., Murray, L. M., Prineas, J. P., Flatté, M. E., Boggess, T. F.

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Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux von Koerperick, E.J., Murray, L.M., Norton, D.T., Boggess, T.F., Prineas, J.P.

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Excitonic photoluminescence in semiconductor quantum wells: plasma versus excitons von Chatterjee, S, Ell, C, Mosor, S, Khitrova, G, Gibbs, H M, Hoyer, W, Kira, M, Koch, S W, Prineas, J P, Stolz, H

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Interaction of strong single-cycle terahertz pulses with semiconductor quantum wells von Danielson, J R, Lee, Yun-Shik, Prineas, J P, Steiner, J T, Kira, M, Koch, S W

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Measurement of recombination mechanisms in mid-infrared W-superlattices von Bogh, C. L., Muhowski, A. J., Nelson, M. D., Rodgers, V. G. J., Prineas, J. P.

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MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination von Reddy, M H M, Olesberg, J T, Cao, C, Prineas, J P

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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices von Olson, B. V., Murray, L. M., Prineas, J. P., Flatté, M. E., Olesberg, J. T., Boggess, T. F.

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Broadband 2.4 μm superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules von Wootten, M B, Tan, J, Chien, Y J, Olesberg, J T, Prineas, J P

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Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon von Muhowski, A.J., Bogh, C.L., Heise, R.L., Boggess, T.F., Prineas, J.P.

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All-optical spin-dependent polarization switching in Bragg-spaced quantum well structures von Johnston, W. J., Yildirim, M., Prineas, J. P., Smirl, Arthur L., Gibbs, H. M., Khitrova, G.

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Transient optical response of quantum well excitons to intense narrowband terahertz pulses von Jameson, A. D., Tomaino, J. L., Lee, Yun-Shik, Prineas, J. P., Steiner, J. T., Kira, M., Koch, S. W.

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Quantum correlations in the nonperturbative regime of semiconductor microcavities von Ell, C, Brick, P, Hübner, M, Lee, E S, Lyngnes, O, Prineas, J P, Khitrova, G, Gibbs, H M, Kira, M, Jahnke, F, Koch, S W, Deppe, D G, Huffaker, D L

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Internal quantum efficiency in 6.1 Å superlattices of 77% for mid-wave infrared emitters von Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

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Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters von Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

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Ultrafast ac Stark effect switching of the active photonic band gap from Bragg-periodic semiconductor quantum wells von Prineas, J. P., Zhou, J. Y., Kuhl, J., Gibbs, H. M., Khitrova, G., Koch, S. W., Knorr, A.

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Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses von Tomaino, J.L., Jameson, A.D., Lee, Yun-Shik, Prineas, J.P., Steiner, J.T., Kira, M., Koch, S.W.

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High-power mid-wave infrared LED using W-superlattices and textured surfaces von Montealegre, D. A., Schrock, K. N., Walhof, A. C., Muellerleile, A. M., Prineas, J. P.

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Broadband mid-infrared superlattice light-emitting diodes von Ricker, R. J., Provence, S. R., Norton, D. T., Boggess, T. F., Prineas, J. P.

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