Capless rapid thermal annealing of GaAs using an enhanced overpressure proximity technique von ARMIENTO, C. A, PRINCE, F. C

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Application of a solution proximity annealing technique for fabrication of ion-implanted GaAs integrated circuits von Prince, F.C., Armiento, C.A.

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High mobility GaAs layers obtained by open tube sulfur diffusion von PRINCE, F. C, OREN, M, LAM, M

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Capless rapid thermal annealing of GaAs implanted with Si+ using an enhanced overpressure proximity method von ARMIENTO, C. A, LEHMAN, L. L, PRINCE, F. C, ZEMON, S

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Threshold behavior of (GaAl)As-GaAs lasers at low temperatures von Hwang, C. J., Patel, N. B., Sacilotti, M. A., Prince, F. C., Bull, D. J.

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Waveguiding, spectral, and threshold properties of a stripe geometry single quantum well laser von Prince, F., Mattos, T., Patel, N., Kasemset, D., Chi-shain Hong

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Oxide defined TJS lasers in InGaAsP/InP DH structures von Bull, D., Patel, N., Prince, F., Nannichi, Y.

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Properties of Au-Zn ohmic contacts to p-GaSb von OLIVEIRA, J. B. B, OLIVIERI, C. A, GALZERANI, J. C, PASA, A. A

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Characterization of AuGeNi ohmic contacts on n-GaAs using electrical measurements, Auger electron spectroscopy and X-ray diffractometry von Oliveira, J.B.B, Olivieri, C.A, Galzerani, J.C, Pasa, A.A, Cardoso, L.P, de Prince, F.C

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Hole burning observation in spontaneous emission spectra from 1.3 μm InGaAsP/InP laser by using external light excitations von Liang-Hui, Chen, Mattos, J.C.V., Patel, N.B., Prince, F.C., Campos, A.C.

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Spatially resolved observation of carrier leakage in 1.3-μm IN1-xGaxAsyP1-y lasers von LIANG-HUI CHEN, MATTOS, J. C. V, PRINCE, F. C, PATEL, N. B

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Upper bound for the amplitude of CDW's in highly excited GaAs and InGaAsP von Borba, G.L., Prince, F.C., Patel, N., de Castro, A.R.B.

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Photoluminescence investigation in N type InGaAsP heterostructure von Chen, Liang-Hui, Mattos, J.C.V., Prince, F.C., Patel, N.B.

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(InGa)(AsP)/InP embedded mesa stripe lasers von Prince, F. C., Patel, N. B., Bull, D. J.

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On depth profiling an InGaAsP-InP heterojunction von Landers, R., Prince, F. C., Sundaram, V. S., Patel, N. B.

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Benefits of early detection and treatment of human immunodeficiency virus infections von Lee, S S

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Narrow stripe graded barrier single quantum well lasers-threshold current considerations von Patel, N., Mattos, T., Prince, F., Nunes, A.

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Characterization of AuGeNi Ohmic Contacts on n-GaAs Using Electrical Measurements, Auger Electron Spectroscopy and X-Ray Diffractometry von Oliveira, J B B, Olivieri, C A, Galzerani, J C, Pasa, A A, Cardoso, L P, de Prince, F C

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Spatially resolved observation of carrier leakage in 1.3-μm In1− x Ga x As y P1− y lasers von Chen, Liang-Hui, Mattos, J. C. V., Prince, F. C., Patel, N. B.

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Photoluminescence investigation in N type InGaAsP heterostructure von LIANG-HUI CHEN, MATTOS, J. C. V, PRINCE, F. C, PATEL, N. B

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