Universal phonon mean free path spectra in crystalline semiconductors at high temperature von Freedman, Justin P., Leach, Jacob H., Preble, Edward A., Sitar, Zlatko, Davis, Robert F., Malen, Jonathan A.

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Modular Open-Core System for Collection and Near Real-Time Processing of High-Resolution Data from Wearable Sensors von Temple, Dorota S, Hegarty-Craver, Meghan, Gaur, Pooja, Boyce, Matthew D, Holt, Jonathan R, Preble, Edward A, Eckhoff, Randall P, Davis-Wilson, Hope, Walls, Howard J, Dausch, David E, Blackston, Matthew A

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Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates von Liu, Fang, Huang, Li, Kamaladasa, Ranga, Picard, Yoosuf N., Preble, Edward A., Paskova, Tanya, Evans, Keith R., Davis, Robert F., Porter, Lisa M.

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Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate von Wang, Yaqi, Alur, Siddharth, Sharma, Yogesh, Tong, Fei, Thapa, Resham, Gartland, Patrick, Issacs-Smith, Tamara, Ahyi, Claude, Williams, John, Park, Minseo, Johnson, Mark, Paskova, Tanya, Preble, Edward A, Evans, Keith R

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Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates von Huang, Li, Liu, Fang, Zhu, Jingxi, Kamaladasa, Ranga, Preble, Edward A., Paskova, Tanya, Evans, Keith, Porter, Lisa, Picard, Yoosuf N., Davis, Robert F.

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Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate von Zhou, Yi, Ahyi, Claude, Isaacs-Smith, Tamara, Bozack, Michael, Tin, Chin-Che, Williams, John, Park, Minseo, Cheng, An-jen, Park, Jung-Hyun, Kim, Dong-Joo, Wang, Dake, Preble, Edward A., Hanser, Andrew, Evans, Keith

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2″-4″ diameter GaN-on-sapphire substrates free of wafer bow at all temperatures von Preble, Edward A., Leach, Jacob H., Metzger, Robert, Shishkin, Eugene, Udwary, Kevin A.

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Fabrication and device characteristics of Schottky-type bulk GaN-based "visible-blind" ultraviolet photodetectors von Zhou, Yi, Ahyi, Claude, Tin, Chin-Che, Williams, John, Park, Minseo, Kim, Dong-Joo, Cheng, An-Jen, Wang, Dake, Hanser, Andrew, Preble, Edward A., Williams, N. Mark, Evans, Keith

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Wearable Sensor-Based Detection of Influenza in Presymptomatic and Asymptomatic Individuals von Temple, Dorota S, Hegarty-Craver, Meghan, Furberg, Robert D, Preble, Edward A, Bergstrom, Emma, Gardener, Zoe, Dayananda, Pete, Taylor, Lydia, Lemm, Nana-Marie, Papargyris, Loukas, McClain, Micah T, Nicholson, Bradly P, Bowie, Aleah, Miggs, Maria, Petzold, Elizabeth, Woods, Christopher W, Chiu, Christopher, Gilchrist, Kristin H

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Structural TEM study of nonpolar a-plane gallium nitride grown on (11 20) 4H-SiC by organometallic vapor phase epitaxy von ZAKHAROV, Dmitri N, LILIENTAL-WEBER, Zuzanna, WAGNER, Brian, REITMEIER, Zachary J, PREBLE, Edward A, DAVIS, Robert F

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The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers von Su, Zonghui, Freedman, Justin P., Leach, Jacob H., Preble, Edward A., Davis, Robert F., Malen, Jonathan A.

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Wavelength-stable cyan and green light emitting diodes on nonpolar m -plane GaN bulk substrates von Detchprohm, Theeradetch, Zhu, Mingwei, Li, Yufeng, Zhao, Liang, You, Shi, Wetzel, Christian, Preble, Edward A., Paskova, Tanya, Hanser, Drew

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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates von Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.

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Green light emitting diodes on a -plane GaN bulk substrates von Detchprohm, Theeradetch, Zhu, Mingwei, Li, Yufeng, Xia, Yong, Wetzel, Christian, Preble, Edward A., Liu, Lianghong, Paskova, Tanya, Hanser, Drew

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Continuous Monitoring of Heart Rate Variability in Free-Living Conditions Using Wearable Sensors: Exploratory Observational Study von Gaur, Pooja, Temple, Dorota S, Hegarty-Craver, Meghan, Boyce, Matthew D, Holt, Jonathan R, Wenger, Michael F, Preble, Edward A, Eckhoff, Randall P, McCombs, Michelle S, Davis-Wilson, Hope C, Walls, Howard J, Dausch, David E

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Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier von Zhou, Yi, Wang, Dake, Ahyi, Claude, Tin, Chin-Che, Williams, John, Park, Minseo, Williams, N. Mark, Hanser, Andrew, Preble, Edward A.

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Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes von Zhu, Mingwei, You, Shi, Detchprohm, Theeradetch, Paskova, Tanya, Preble, Edward A., Hanser, Drew, Wetzel, Christian

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Highly Polarized Green Light Emitting Diode in $m$-Axis GaInN/GaN von You, Shi, Detchprohm, Theeradetch, Zhu, Mingwei, Hou, Wenting, Preble, Edward A, Hanser, Drew, Paskova, Tanya, Wetzel, Christian

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Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction von Stark, Christoph J. M., Detchprohm, Theeradetch, Zhao, Liang, Paskova, Tanya, Preble, Edward A., Wetzel, Christian

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Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes von Zhu, Mingwei, You, Shi, Detchprohm, Theeradetch, Paskova, Tanya, Preble, Edward A., Wetzel, Christian

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