Bulk Growth of Large Area SiC Crystals von Deyneka, Eugene, Seaman, Jeff, Dudley, Michael, Leonard, R.T., Ambati, Jyothi, Balkas, Elif, Khlebnikov, Yuri, Powell, Adrian R., Kramarenko, Olek, Guo, J.Q., McClure, Andy, O’Loughlin, M., Sumakeris, Joseph J., Sakhalkar, Varad, Paisley, Michael J., Tsevtkov, V., Burk, Albert A., Horton, Chris, Gangwal, Sumit

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Dislocation Characterization in 4H-SiC Crystals von Guo, Jian Qiu, Sumakeris, Joseph J., Deyneka, Eugene, Seaman, Jeff, Yang, Yu, Leonard, R.T., Paisley, Michael J., Balkas, Elif, Tsevtkov, V., Khlebnikov, Yuri, Powell, Adrian R., Dudley, Michael

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers von Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.

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Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry von Tiwald, Thomas E., Woollam, John A., Zollner, Stefan, Christiansen, Jim, Gregory, R. B., Wetteroth, T., Wilson, S. R., Powell, Adrian R.

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Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers von Zhang, Q. Jon, Rivera, Angel, Sumakeris, Joseph J., Hefner, A., Paisley, Michael J., Tsvetkov, Valeri F., O'Loughlin, Michael J., Richmond, Jim, Powell, Adrian R., Hull, Brett A.

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Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields von Richmond, Jim, Powell, Adrian R., Sumakeris, Joseph J., Krishnaswami, Sumi, Hull, Brett A., Das, Mrinal K.

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Critical Technical Issues in High Voltage SiC Power Devices von Jonas, Charlotte, Zhang, Q. Jon, Agarwal, Anant K., Stahlbush, Robert E., Ryu, Sei Hyung, Powell, Adrian R., O`Neil, Michael, Hull, Brett A., Das, Mrinal K., Burk, Albert A., Capell, Craig, Sumakeris, Joseph J., Haney, Sarah K., Palmour, John W., O'Loughlin, Michael J., Richmond, Jim, Callanan, Robert

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices von Calus, M.R., Glass, R.C., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Carter Jr, Calvin H., Powell, Adrian R., Jenny, Jason R., Müller, Stephan G.

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Defect Status in SiC Manufacturing von Leonard, R.T., Paisley, Michael J., Hobgood, H.McD, Carter Jr, Calvin H., Powell, Adrian R., Basceri, C., Brady, M.F., Burk, Albert A., Balkas, C., Khlebnikov, I., Sumakeris, Joseph J., Balakrishna, Vijay, Khlebnikov, Y., Malta, D.P., Tsvetkov, Valeri F., Berkman, Elif, O'Loughlin, Michael J., Deyneka, E.

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Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances von Calus, M.R., Glass, R.C., McD. Hobgood, H., Malta, D.P., Leonard, R.T., Tsvetkov, Valeri F., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G.

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Sublimation-Grown Semi-Insulating SiC for High Frequency Devices von Allen, S.T., Glass, R.C., Brixius, W.H., Leonard, R.T., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Palmour, John W.

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Large Diameter 4H-SiC Substrates for Commercial Power Applications von Burk, Albert A., Glass, R.C., Sumakeris, Joseph J., McD. Hobgood, H., Leonard, R.T., Tsvetkov, Valeri F., Trussell, R., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Müller, Stephan G.

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SiC materials-progress, status, and potential roadblocks von Powell, A.R., Rowland, L.B.

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Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps von Dudley, Michael, Powell, Adrian R., Derenge, Michael A., Jones, Kenneth A., Kirchner, K.W.

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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production von Allen, S.T., Glass, R.C., Fechko, G., Brixius, W.H., Leonard, R.T., Henshall, D., Carter Jr, Calvin H., Powell, Adrian R., Brady, M.F., Jenny, Jason R., Müller, Stephan G., McD. Hobgood, H., Malta, D.P., Tsvetkov, Valeri F., Palmour, John W.

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100 mm 4HN-SiC Wafers with Zero Micropipe Density von Leonard, R.T., Paisley, Michael J., Khlebnikov, I., Hobgood, H.McD, Carter Jr, Calvin H., Powell, Adrian R., Basceri, C., Brady, M.F., Zilli, R., Jenny, Jason R., Balakrishna, Vijay, Khlebnikov, Y., Malta, D.P., Tsvetkov, Valeri F., Deyneka, E.

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Thermally Induced Precipitation of Silicon Carbide in a Semiconductor Matrix-Application to Nanoparticle Fabrication von Powell, Adrian R., LeGoues, Francoise K., Iyer, Subramanian S., Bruce Ek, Bruce Ek

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Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering von Iyer, Adrian R. Powell

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers : Silicon carbide devices and technology von HULL, Brett A, SUMAKERIS, Joseph J, O'LOUGHLIN, Michael J, QINGCHUN ZHANG, RICHMOND, Jim, POWELL, Adrian R, IMHOFF, Eugene A, HOBART, Karl D, RIVERA-LOPEZ, Angel, HEFNER, Allen R

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SiC materials-progress, status, and potential roadblocks: Special Issue on Wide Bandgap Semiconductor Devices von POWELL, Adrian R, ROWLAND, Larry B

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