Theoretical investigation of nitrogen-vacancy defects in silicon von Potsidi, M. S., Kuganathan, N., Christopoulos, S.-R. G., Sarlis, N. V., Chroneos, A., Londos, C. A.

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The origin of infrared bands in nitrogen-doped Si von Potsidi, M. S., Angeletos, T., Londos, C. A.

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Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon von Londos, C. A., Angeletos, T., Antonaras, G. D., Potsidi, M. S.

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Isochronal annealing studies of carbon-related defects in irradiated Si von Londos, C.A., Potsidi, M.S., Antonaras, G.D., Andrianakis, A.

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Carbon-related complexes in neutron-irradiated silicon von Londos, C.A., Potsidi, M.S., Stakakis, E.

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Infrared absorption spectra of defects in carbon doped neutron-irradiated Si von LONDOS, C. A, ANTONARAS, G. D, POTSIDI, M. S, ALIPRANTIS, D. N, MISIUK, A

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Production and evolution of defects in neutron-irradiated Si subjected to thermal pre-treatments under hydrostatic pressure von Londos, C A, Antonaras, G J, Potsidi, M S, Misiuk, A, Antonova, I V, Emtsev, V V

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Effect of carbon on oxygen precipitation in Czochralski silicon von Londos, C. A., Potsidi, M. S., Emtsev, V. V.

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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si von Londos, C.A., Antonaras, G.D., Potsidi, M.S., Misiuk, A.

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Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons von Antonova, I. V., Londos, C. A., Bak-Misiuk, J., Gutakovskii, A. K., Potsidi, M. S., Misiuk, A.

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Pressure assisted evolution of defects in silicon von Londos, C. A., Potsidi, M. S., Bak-Misiuk, J., Misiuk, A., Emtsev, V. V.

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Experimental and theoretical study of the C4 defect in neutron irradiated silicon von Londos, C. A., Aliprantis, D. N., Antonaras, G., Potsidi, M. S., Angeletos, T.

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Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon von Emtsev Jr, V. V., Ammerlaan, C. A. J., Emtsev, V. V., Oganesyan, G. A., Misiuk, A., Surma, B., Bukowski, A., Londos, C. A., Potsidi, M. S.

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Substitutional carbon-dioxygen center in irradiated silicon von Potsidi, M.S., Kuganathan, N., Chroneos, A., Christopoulos, S.-R.G., Angeletos, T., Sarlis, N.V., Londos, C.A.

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The CiCs(SiI) defect in silicon: An infrared spectroscopy study von Potsidi, M. S., Londos, C. A.

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Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon von Londos, C. A., Potsidi, M. S., Misiuk, A., Ratajczak, J., Emtsev, V. V., Antonaras, G.

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The C i C s ( Si I ) defect in silicon: An infrared spectroscopy study von Potsidi, M. S., Londos, C. A.

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Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon von Londos, Charalamos A., Potsidi, M.S., Shalimov, Artem, Emtsev, Valentin V., Bak-Misiuk, Jadwiga, Misiuk, Andrzej

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Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650 °C under hydrostatic pressure von Surma, B., Londos, C.A., Emtsev, V.V., Misiuk, A., Bukowski, A., Potsidi, M.S.

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IR Studies on the Interaction between Thermal and Radiation Defects in Silicon von Londos, Charalamos A., Potsidi, M.S., Antonaras, G.D., Antonova, I.V., Misiuk, Andrzej, Sgourou, Efstratia N.

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