Spin-torque oscillator using a perpendicular polarizer and a planar free layer von Houssameddine, D., Ebels, U., Delaët, B., Rodmacq, B., Firastrau, I., Ponthenier, F., Brunet, M., Thirion, C., Michel, J.-P., Prejbeanu-Buda, L., Cyrille, M.-C., Redon, O., Dieny, B.

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3D high resolution imaging for microelectronics: A multi-technique survey on copper pillars von Fraczkiewicz, A., Lorut, F., Audoit, G., Boller, E., Capria, E., Cloetens, P., Da Silva, J., Farcy, A., Mourier, T., Ponthenier, F., Bleuet, P.

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Electrical characterization of SOI pMOS device leakage von Bosch, D., Lheritier, P., Guyader, F., Joblot, S., Ponthenier, F., Lacord, J.

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Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs von Boutayeb, A., Theodorou, C., Golanski, D., Batude, P., Brunet, L., Bosch, D., Guyader, F., Joblot, S., Ponthenier, F., Lacord, J.

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(Invited) Direct Bonding: A Key Enabler for 3D Monolithic Integration von Brunet, Laurent, Batude, Perrine, Fournel, Frank, Benaissa, Lamine, Fenouillet-Beranger, Claire, Pasini, Luca, Deprat, Fabien, Previtali, Bernard, Ponthenier, Fabienne, Seignard, Aurélien, Euvrard-Colnat, Catherine, Rivoire, Maurice, Besson, Pascal, Arvet, Christian, Beche, Elodie, Rozeau, Olivier, Billoint, Olivier, Turkyilmaz, Ogun, Clermidy, Fabien, Signamarcheix, Thomas, Vinet, Maud

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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs von Morvan, S., Andrieu, F., Leroux, C., Garros, X., Cassé, M., Martin, F., Gassilloud, R., Morand, Y., Le Royer, C., Besson, P., Roure, M.-C., Euvrard, C., Rivoire, M., Seignard, A., Desvoivres, L., Barnola, S., Allouti, N., Caubet, P., Weber, U., Baumann, P.K., Weber, O., Tosti, L., Perreau, P., Ponthenier, F., Ghibaudo, G., Poiroux, T.

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Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs: Insulating Films on Semiconductors 2013 von MORVAN, S, ANDRIEU, F, ROURE, M.-C, EUVRARD, C, RIVOIRE, M, SEIGNARD, A, DESVOIVRES, L, BARNOLA, S, ALLOUTI, N, CAUBET, P, WEBER, U, BAUMANN, P. K, LEROUX, C, WEBER, O, TOSTI, L, PERREAU, P, PONTHENIER, F, GHIBAUDO, G, POIROUX, T, GARROS, X, CASSE, M, MARTIN, F, GASSILLOUD, R, MORAND, Y, LE ROYER, C, BESSON, P

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Detailed Characterisation of Ni Microinsert Technology For Flip Chip Die on Wafer Attachment von Mathewson, A., Brun, J., Ponthenier, G., Franiatte, R., Nowodzinski, A., Sillon, N., Poupon, G., Deputot, F., Dubois-Bonvalot, B.

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Effects of annealing on highly damaged bubble garnet layers ion implanted with Xe and As von Gerard, Ph, Ravel, F., Ponthenier, J. L., Dupuy, M., Blanchard, B.

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Localized Micro-Inserts Connection for Smart Card Secure Micro Packaging von Brun, J., Franiatte, R., Puget, C., Souriau, J.C., Mathieu, L., Ponthenier, G., Sillon, N., Bonvalot, B., Depoutot, F., Barbe, S.

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