Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaP von POMRENKE, G. S, ENNEN, H, HAYDL, W

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Luminescence of thulium in III-V semiconductors and silicon von POMRENKE, G. S, SILKOWSKI, E, COLON, J.E, TOPP, D. J, YEO, Y. K, HENGEHOLD, R. L

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Electrical properties of boron-doped p–SiGeC grown on n−–Si substrate von Ahoujja, M., Yeo, Y. K., Hengehold, R. L., Pomrenke, G. S., Look, D. C., Huffman, Jim

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A study of the 0.1-eV conversion acceptor in GaAs von LOOK, D. C, POMRENKE, G. S

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Enhancement of the Er(3+) emissions from AlGaAs:Er codoped with oxygen von Colon, J E, Elsaesser, D W, Yeo, Y K, Hengehold, R L, Pomrenke, G S

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Enhancement of the Er3+ emissions from AlGaAs:Er codoped with oxygen von COLON, J. E, ELSAESSER, D. W, YEO, Y. K, HENGEHOLD, R. L, POMRENKE, G. S

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Actinide-activated luminescence in uranium-implanted III-V semiconductors von POMRENKE, G. S, HENGEHOLD, R. L, YUNG KEE YEO, BROWN, I. G, SOLOMON, J. S

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A study of broad band photoluminescence from Si1-xGex/Si superlattices von STEINER, T. D, HENGEHOLD, R. L, YEO, Y. K, GODBEY, D. J, THOMPSON, P. E, POMRENKE, G. S

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Excitation of the 4f-electron of Pr3+ in GaAs: Pr and AlxGa1-xAs: Pr von Thee, P L, Yeo, Y K, Hengehold, R L, Pomrenke, G S

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Luminescence characteristics of the 1.4 eV silicon related complex in gallium arsenide von Pomrenke, G.S., Park, Y.S., Hengehold, R.L., Maclin, M.T.

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Excitation and temperature dependence of the excitonic emissions in undoped and Mg-doped VPE InP von Pomrenke, Gernot S., Park, Y.S.

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Excitation of the 4 f -electron of Pr 3+ in GaAs: Pr and Al x Ga 1- x As: Pr von Thee, P L, Yeo, Y K, Hengehold, R L, Pomrenke, G S

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Optical activation of ion implanted and annealed GaN von Silkowski, Eric, Pomrenke, Gernot S, Yeo, Yung Kee, Hengehold, Robert L

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Evidence of amphoteric behavior of Si in VPE InP von Pomrenke, Gernot S.

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Photoluminescence from Mg-implanted, epitaxial, and semi-insulating InP von Pomrenke, Gernot S., Park, Y. S., Hengehold, Robert L.

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Excitation Mechanism of the Erbium 4F Emissions in GaAs von Elsaesser, D.W., Yeo, Y.K., Pomrenke, G.S., Colon, J.E., Hengehold, R.L.

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Thermoelectric properties of InxGa1−xN alloys von Pantha, B. N., Dahal, R., Li, J., Lin, J. Y., Jiang, H. X., Pomrenke, G.

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Thermoelectric Properties of In0.3Ga0.7N Alloys von Pantha, B. N., Dahal, R., Li, J., Lin, J. Y., Jiang, H. X., Pomrenke, G.

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Thermoelectric properties of In x Ga 1 − x N alloys von Pantha, B. N., Dahal, R., Li, J., Lin, J. Y., Jiang, H. X., Pomrenke, G.

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Thermoelectric Properties of In^sub 0.3^Ga^sub 0.7^N Alloys von Pantha, B N, Dahal, R, Li, J, Lin, J Y, Jiang, H X, Pomrenke, G

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