Molecular dynamics study of thermal transport across Ga2O3–diamond interfaces von Petkov, Alexander, Mishra, Abhishek, Pomeroy, James W., Kuball, Martin

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Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration von Yuan, Chao, Li, Jiahan, Lindsay, Lucas, Cherns, David, Pomeroy, James W., Liu, Song, Edgar, James H., Kuball, Martin

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Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications von Sun, Huarui, Simon, Roland B., Pomeroy, James W., Francis, Daniel, Faili, Firooz, Twitchen, Daniel J., Kuball, Martin

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Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond von Field, Daniel E, Cuenca, Jerome A, Smith, Matthew, Fairclough, Simon M, Massabuau, Fabien C-P, Pomeroy, James W, Williams, Oliver, Oliver, Rachel A, Thayne, Iain, Kuball, Martin

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Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure von Manoi, A, Pomeroy, J W, Killat, N, Kuball, M

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Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond von Waller, William M, Pomeroy, James W, Field, Daniel, Smith, Edmund J W, May, Paul W, Kuball, Martin

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Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices von Liu, Dong, Francis, Daniel, Faili, Firooz, Middleton, Callum, Anaya, Julian, Pomeroy, James W., Twitchen, Daniel J., Kuball, Martin

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Characterizing electric fields in semiconductor devices: effect of second-harmonic light interference von Cao, Yuke, Pomeroy, James W, Kuball, Martin

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GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity von Liu, Dong, Sun, Huarui, Pomeroy, James W., Francis, Daniel, Faili, Firooz, Twitchen, Daniel J., Kuball, Martin

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Mechanism of hot electron electroluminescence in GaN-based transistors von Brazzini, Tommaso, Sun, Huarui, Sarti, Francesco, Pomeroy, James W, Hodges, Chris, Gurioli, Massimo, Vinattieri, Anna, Uren, Michael J, Kuball, Martin

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GaN-on-diamond technology platform: Bonding-free membrane manufacturing process von Smith, Matthew D., Cuenca, Jerome A., Field, Daniel E., Fu, Yen-chun, Yuan, Chao, Massabuau, Fabien, Mandal, Soumen, Pomeroy, James W., Oliver, Rachel A., Uren, Michael J., Elgaid, Khaled, Williams, Oliver A., Thayne, Iain, Kuball, Martin

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Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy von Simms, R.J.T., Pomeroy, J.W., Uren, M.J., Martin, T., Kuball, M.

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Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance von Zheng, Xiang, Pomeroy, James W., Jindal, Gautam, Kuball, Martin

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Influence of microstructural defects on the thermal conductivity of GaN: A molecular dynamics study von Spiteri, David, Pomeroy, James W., Kuball, Martin

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Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT von Oner, Bahar, Pomeroy, James W., Kuball, Martin

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Scanning thermal microscopy for accurate nanoscale device thermography von Gucmann, Filip, Pomeroy, James W., Kuball, Martin

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Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers von Yuan, Chao, Pomeroy, James W., Kuball, Martin

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Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes von Mishra, Abhishek, Abdallah, Zeina, Pomeroy, James W., Uren, Michael J., Kuball, Martin

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Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs von Power, Máire, Pomeroy, James W., Otoki, Yohei, Tanaka, Takeshi, Wada, Jiro, Kuzuhara, Masaaki, Jantz, Wolfgang, Souzis, Andrew, Kuball, Martin

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A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs von Zheng, Xiang, Moule, Taylor, Pomeroy, James W., Higashiwaki, Masataka, Kuball, Martin

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