Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Yang, Jiancheng, Ren, F., Yang, Gwangseok, Kim, Jihyun, Kuramata, A., Pearton, S. J.

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments von Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Lagov, P. B., Zinov'ev, R. A., Yakimov, E. B., Shcherbachev, K. D., Pearton, S. J.

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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes von Polyakov, A. Y., Haller, C., Smirnov, N. B., Shiko, A. S., Shchemerov, I. V., Chernykh, S. V., Alexanyan, L. A., Lagov, P. B., Pavlov, Yu. S., Carlin, J.-F., Mosca, M., Butté, R., Grandjean, N., Pearton, S. J.

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Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy von Polyakov, A. Y., Smirnov, N. B., Yakimov, E. B., Lee, In-Hwan, Pearton, S. J.

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Movement of basal plane dislocations in GaN during electron beam irradiation von Yakimov, E. B., Vergeles, P. S., Polyakov, A. Y., Lee, In-Hwan, Pearton, S. J.

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Design and testing of high-speed interconnects for superconducting multi-chip modules von Narayana, S, Semenov, V K, Polyakov, Y A, Dotsenko, V, Tolpygo, S K

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Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical... von Jang, Lee-Woon, Jeon, Dae-Woo, Polyakov, A.Y., Govorkov, A.V., Sokolov, V.N., Smirnov, N.B., Cho, Han-Su, Yun, Jin-Hyeon, Shcherbatchev, K.D., Baek, Jong-Hyeob, Lee, In-Hwan

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Lifetime-limiting defects in n − 4H-SiC epilayers von Klein, P. B., Shanabrook, B. V., Huh, S. W., Polyakov, A. Y., Skowronski, M., Sumakeris, J. J., O'Loughlin, M. J.

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Electrical properties of bulk semi-insulating β-Ga2O3 (Fe) von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Pearton, S. J., Ren, Fan, Chernykh, A. V., Kochkova, A. I.

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EBIC investigations of dislocations in ELOG GaN von Yakimov, E. B., Polyakov, A. Y.

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Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching von Polyakov, A. Y., Jeon, Dae-Woo, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yakimov, E. B., Lee, In-Hwan

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Electrical properties of undoped GaN films grown by maskless epitaxial lateral overgrowth von Polyakov, A. Y., Jeon, Dae-Woo, Lee, In-Hwan, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yakimov, E. B.

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Pearton, S. J., Fares, Chaker, Yang, Jiancheng, Ren, Fan, Kim, Jihyun, Lagov, P. B., Stolbunov, V. S., Kochkova, A.

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3 von Yakimov, E. B., Polyakov, A. Y., Shchemerov, I. V., Smirnov, N. B., Vasilev, A. A., Vergeles, P. S., Yakimov, E. E., Chernykh, A. V., Ren, F., Pearton, S. J.

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Electrical characteristics of Au and Ag Schottky contacts on n-ZnO von Polyakov, A. Y., Smirnov, N. B., Kozhukhova, E. A., Vdovin, V. I., Ip, K., Heo, Y. W., Norton, D. P., Pearton, S. J.

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Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga2O3: effects of carrier trapping with deep centers von Polyakov, A Y, Yakimov, E B, Shchemerov, I V, Vasilev, A A, Kochkova, A I, Nikolaev, V I, Pearton, S J

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Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra von Polyakov, A. Y., Lee, In-Hwan, Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Ren, F., Carey, P. H., Pearton, S. J.

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors von Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, Minghan, Ren, F., Pearton, S.J.

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Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions von Polyakov, A. Y., Yakimov, E. B., Saranin, D. S., Chernykh, A. V., Vasilev, A. A., Gostishchev, P., Kochkova, A. I., Alexanyan, L. A., Matros, N. R., Shchemerov, I. V., Pearton, S. J.

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Observation of temperature-dependent capture cross section for main deep-levels in β-Ga2O3 von Vasilev, A. A., Kochkova, A. I., Polyakov, A. Y., Romanov, A. A., Matros, N. R., Alexanyan, L. A., Shchemerov, I. V., Pearton, S. J.

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