Proximity gettering of slow diffuser contaminants in CMOS image sensors von Russo, F., Moccia, G., Nardone, G., Alfonsetti, R., Polsinelli, G., D’Angelo, A., Patacchiola, A., Liverani, M., Pianezza, P., Lippa, T., Carlini, M., Polignano, M.L., Mica, I., Cazzini, E., Ceresoli, M., Codegoni, D.

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A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing von Polignano, M. L., Codegoni, D., Grasso, S., Mica, I., Borionetti, G., Nutsch, A.

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Optimization of laser anneal conditions for implanted shallow p/n-junctions von Soncini, V., Mica, I., Grasso, S., Polignano, M.L., Sansone, M.A., Margutti, G., Muzi, L.

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Analysis of the dark current distribution of complementary metal-oxide-semiconductor image sensors in the presence of metal contaminants von Polignano, M L, Russo, F, Moccia, G, Nardone, G

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Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations von Tessier, G, Polignano, M-L, Pavageau, S, Filloy, C, Fournier, D, Cerutti, F, Mica, I

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Crystal defects and junction properties in the evolution of device fabrication technology von Mica, I, Polignano, M L, Carnevale, G, Ghezzi, P, Brambilla, M, Cazzaniga, F, Martinelli, M, Pavia, G, Bonera, E

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Contamination by slow diffusers in ion implantation processes: The examples of molybdenum and tungsten von Polignano, M.L., Mica, I., Barbarossa, F., Galbiati, A., Grasso, S., Soncini, V.

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Tungsten contamination in ion implantation von Polignano, M.L., Barbarossa, F., Galbiati, A., Magni, D., Mica, I.

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Comparison of techniques for detecting metal contamination in silicon wafers von Polignano, M.L., Borionetti, G., Galbiati, A., Grasso, S., Mica, I., Nutsch, A.

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Detection and reduction of tungsten contamination in ion implantation processes von Polignano, M. L., Galbiati, A., Grasso, S., Mica, I., Barbarossa, F., Magni, D.

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The evolution of the ion implantation damage in device processing von Polignano, M. L., Mica, I., Bontempo, V., Cazzaniga, F., Mariani, M., Mauri, A., Pavia, G., Sammiceli, F., Spoldi, G.

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Quantitative evaluation of iron at the silicon surface after wet cleaning treatments von CAPUTO, D, BACCIAGLIA, P, CARPANESE, C, POLIGNANO, M. L, LAZZERI, P, BERSANI, M, VANZETTI, L, PIANETTA, P, MORO, L

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Simultaneous characterization of bulk impurities and interface states by photocurrent measurements von Polignano, M.L., Caricato, A.P.

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Characterization of Organic Contamination in Semiconductor Manufacturing Processes von Nutsch, A, Beckhoff, B, Bedana, G, Borionetti, G, Codegoni, D, Grasso, S, Guerinoni, G, Leibold, A, Muller, M, Otto, M, Pfitzner, L, Polignano, M-L, De Simone, D, Frey, L

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Detection of metal segregation at the oxide-silicon interface von POLIGNANO, M. L, GIUSSANI, A, CAPUTO, D, CLEMENTI, C, PAVIA, G, PRIOLO, F

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Leakage current and deep levels in CoSi2 silicided junctions von Codegoni, D., Carnevale, G.P., De Marco, C., Mica, I., Polignano, M.L.

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Low temperature drive-in of surface-deposited copper in silicon wafers von Polignano, M. L., Caputo, D., Carpanese, C., Salvà, G., Vanzetti, L.

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Interface properties of annealed and nitrided HTO layers von Polignano, M.L, Carpanese, C, Crivelli, B, Giussani, A, Zonca, R, Bersani, M

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The impact of the nitridation process on the properties of the Si-SiO2 interface von POLIGNANO, M. L, ALESSANDRI, M, CRIVELLI, B, ZONCA, R, CARICATO, A. P, BERSANI, M, SBETTI, M, VANZETTI, L

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A novel method for the simultaneous characterization of bulk impurities and surface states by photocurrent measurements von POLIGNANO, M. L, CARICATO, A. P, MODELLI, A, ZONCA, R

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