Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage von Chikhaoui, W., Bluet, J.-M., Poisson, M.-A., Sarazin, N., Dua, C., Bru-Chevallier, C.

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz von Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.

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Diamond overgrown InAlN/GaN HEMT von Alomari, M., Dipalo, M., Rossi, S., Diforte-Poisson, M.-A., Delage, S., Carlin, J.-F., Grandjean, N., Gaquiere, C., Toth, L., Pecz, B., Kohn, E.

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure von Ben Ammar, H., Minj, A., Gamarra, P., Lacam, C., Tordjman, M., di Forte‐Poisson, M. A., Morales, M., Chauvat, M. P., Ruterana, P.

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Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC von Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A.

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Room-temperature terahertz emission from nanometer field-effect transistors von Dyakonova, N., El Fatimy, A., Łusakowski, J., Knap, W., Dyakonov, M. I., Poisson, M.-A., Morvan, E., Bollaert, S., Shchepetov, A., Roelens, Y., Gaquiere, Ch, Theron, D., Cappy, A.

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Surface potential of n - and p -type GaN measured by Kelvin force microscopy von Barbet, S., Aubry, R., di Forte-Poisson, M.-A., Jacquet, J.-C., Deresmes, D., Mélin, T., Théron, D.

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Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN von Redondo-Cubero, A, Lorenz, K, Gago, R, Franco, N, di Forte Poisson, M-A, Alves, E, Muñoz, E

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Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs von Bisi, D., Stocco, A., Rossetto, I., Meneghini, M., Rampazzo, F., Chini, A., Soci, F., Pantellini, A., Lanzieri, C., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M.-A., De Salvador, D., Bazzan, M., Meneghesso, G., Zanoni, E.

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Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs von Rossetto, I., Rampazzo, F., Gerardin, S., Meneghini, M., Bagatin, M., Zanandrea, A., Dua, C., di Forte-Poisson, M.-A., Aubry, R., Oualli, M., Delage, S.L., Paccagnella, A., Meneghesso, G., Zanoni, E.

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures von Bergsten, J, Malmros, A, Tordjman, M, Gamarra, P, Lacam, C, di Forte-Poisson, M-A, Rorsman, N

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Annealed Ti/Cr/Al contacts on n-GaN von Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Poisson, M.-A.

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Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs von Rossetto, I., Rampazzo, F., Meneghini, M., Silvestri, M., Dua, C., Gamarra, P., Aubry, R., di Forte-Poisson, M.-A., Patard, O., Delage, S.L., Meneghesso, G., Zanoni, E.

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation von CICO, K, GREGUSOVA, D, KUZMIK, J, JURKOVIC, M, ALEXEWICZ, A, DI FORTE POISSON, M.-A, POGANY, D, STRASSER, G, DELAGE, S, FRÖHLICH, K

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Characteristics of Al2O3/AlInN/GaN MOSHEMT von MEDJDOUB, F, SARAZIN, N, TORDJMAN, M, MAGIS, M, DI FORTE-POISSON, M. A, KNEZ, M, DELOS, E, GAQUIERE, C, DELAGE, S. L, KOHN, E

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors von Naresh-Kumar, G., Vilalta-Clemente, A., Pandey, S., Skuridina, D., Behmenburg, H., Gamarra, P., Patriarche, G., Vickridge, I., di Forte-Poisson, M. A., Vogt, P., Kneissl, M., Morales, M., Ruterana, P., Cavallini, A., Cavalcoli, D., Giesen, C., Heuken, M., Trager-Cowan, C.

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AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation von Dyakonova, N., But, D.B., Coquillat, D., Knap, W., Drexler, C., Olbrich, P., Karch, J., Schafberger, M., Ganichev, S.D., Ducournau, G., Gaquiere, C., Poisson, M.−A., Delage, S., Cywinski, G., Skierbiszewski, C.

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Fundamentals and practice of metal contacts to wide band gap semiconductor devices von Borysiewicz, M. A., Kamińska, E., Myśliwiec, M., Wzorek, M., Kuchuk, A., Barcz, A., Dynowska, E., di Forte-Poisson, M.-A., Giesen, C., Piotrowska, A.

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High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC von Cuerdo, R., Sillero, E., Romero, M.F., Uren, M.J., di Forte Poisson, M.-A., Munoz, E., Calle, F.

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources von El Fatimy, A., Dyakonova, N., Meziani, Y., Otsuji, T., Knap, W., Vandenbrouk, S., Madjour, K., Théron, D., Gaquiere, C., Poisson, M. A., Delage, S., Prystawko, P., Skierbiszewski, C.

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