Compensation mechanisms in GaAs von Martin, G. M., Farges, J. P., Jacob, G., Hallais, J. P., Poiblaud, G.

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Measurement of the chromium concentration in semi-insulating GaAs using optical absorption von Martin, G. M., Verheijke, M. L., Jansen, J.A.J., Poiblaud, G.

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Influence of stresses on the thermal parameters of chromium-doped GaAs von JOUGLAR, J, M'GHAIETH, R, VUILLERMOZ, P. L, GAUTHIER, R, PINARD, P, POIBLAUD, G

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EPR investigations of the defect chemistry of semi-insulating GaAs : Cr von Goltzené, A., Poiblaud, G., Schwab, C.

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Study of experimental conditions in thermally stimulated current measurements: Application to the characterization of semi-insulating chromium-doped gallium arsenide von Martin, G.M., Hallais, J., Poiblaud, G.

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Deformation potentials of the direct and indirect absorption edges of GaP von Mathieu, H., Merle, P., Ameziane, E. L., Archilla, B., Camassel, J., Poiblaud, G.

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Contribution of activation analysis with low energy charged particles to studies on GaAs von Valladon, M., Blondiaux, G., Koemmerer, C., Hallais, J., Poiblaud, G., Huber, A., Debrun, J. L.

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The no-phonon luminescence at 0.84 eV in GaAs:Cr-splitting under uniaxial stress von Barrau, J, Voillot, F, Brousseau, M, Brabant, J C, Poiblaud, G

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Oxygen-related gettering of silicon during growth of bulk GaAs Bridgman crystals von Martin, G M, Jacob, G, Hallais, J P, Grainger, F, Roberts, J A, Clegg, B, Blood, P, Poiblaud, G

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Croissance en solution de cristaux massifs de phosphure de gallium von Poiblaud, G., Jacob, G.

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Direct experimental observation of band-structure effects in GaP x As1− x  : N alloys by radiative lifetime measurements von Chevallier, J., Mariette, H., Diguet, D., Poiblaud, G.

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Submillimetre cyclotron resonance of electrons in GaP von Leotin, J., Ousset, J.C., Barbaste, R., Askenazy, S., Skolnick, M.S., Stradling, R.A., Poiblaud, G.

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Studies on the Elaboration and the Characterization of Gaas by Radioactivation Analysis with Charged Particles von Koemmerer, C., Valladon, M., Giovagnoli, A., Blondiaux, G., Debrun, J. L., Jacob, G., Hallais, J., Poiblaud, G.

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