Applications of spin dependent transport materials von Daughton, J M, Pohm, A V, Fayfield, R T, Smith, C H

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Effect of Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM von Deak, J.G., Daughton, J.M., Pohm, A.V.

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Chopping techniques for low-frequency nanotesla spin-dependent tunneling field sensors von Jander, A., Nordman, C. A., Pohm, A. V., Anderson, J. M.

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Curie point written magnetoresistive memory von Beech, R. S., Anderson, J. A., Pohm, A. V., Daughton, J. M.

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Pseudo spin valve MRAM cells with sub-micrometer critical dimension von Everitt, B.A., Pohm, A.V., Beech, R.S., Fink, A., Daughton, J.M.

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Ultra-low hysteresis and self-biasing in GMR sandwich sensor elements von Anderson, J.M., Pohm, A.V.

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Design of Curie point written magnetoresistance random access memory cells von Daughton, J. M., Pohm, A. V.

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Exchange coupling and edge pinning in vertical head sensors von Pohm, A.V., Anderson, J.M., Beech, R.S., Daughton, J.M.

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The architecture of a high performance mass store with GMR memory cells von Pohm, A.V., Daughton, J.M., Brown, J., Beech, R.

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Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode von Wang, D., Tondra, M., Pohm, A. V., Nordman, C., Anderson, J., Daughton, J. M., Black, W. C.

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Two leg, side by side, 0.6 to 1.0 micron wide, high output, vertical, GMR, head sensors von Pohm, A.V., Anderson, J.M., Beech, R.S., Daughton, J.M.

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Narrow end-on giant magnetoresistance READ-head sensors von Pohm, A.V., Beech, R.S., Anderson, J.M., Black, W.C.

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Single-domain model for pseudo spin valve MRAM cells von Everitt, B.A., Pohm, A.V.

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Bias field and end effects on the switching thresholds of "pseudo spin valve" memory cells von Pohm, A.V., Everitt, B.A., Beech, R.S., Daughton, J.M.

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High-resolution giant magnetoresistance on-chip arrays for magnetic imaging von Smith, C. H., Schneider, R. W., Pohm, A. V.

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Simulation of sub-micron GMR memory cells von Beech, R.S., Pohm, A.V., Daughton, J.M.

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0.1-micron-wide sandwich flux guide and free layer for spin dependent tunneling head sensors von Pohm, A. V., Anderson, J. M.

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New low current memory modes with giant magneto-resistance materials von Ranmuthu, K.T.M., Pohm, A.V., Daughton, J.M., Comstock, C.S.

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Vertical giant magnetoresistive read heads for 50-Gb/in2 magnetic recording von EVERITT, B. A, OLSON, D, VAN NGUYEN, Thu, AMIN, N, POKHIL, T, KOLBO, P, ZHONG, L, MURDOCK, Ed, POHM, A. V, DAUGHTON, J. M

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Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elements von Pohm, A.V., Beech, R.S., Daughton, J.M., Everitt, B.A., Chen, E.Y., Durlam, M., Nordquist, K., Zhu, T., Tehrani, S.

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