Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Implantation and transient B diffusion in Si: The source of the interstitials von Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Poate, J. M.

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Ion beams in silicon processing and characterization von Chason, E., Picraux, S. T., Poate, J. M., Borland, J. O., Current, M. I., Diaz de la Rubia, T., Eaglesham, D. J., Holland, O. W., Law, M. E., Magee, C. W., Mayer, J. W., Melngailis, J., Tasch, A. F.

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B diffusion and clustering in ion implanted Si: The role of B cluster precursors von Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., Poate, J. M.

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Evolution from point to extended defects in ion implanted silicon von Benton, J. L., Libertino, S., Kringho/j, P., Eaglesham, D. J., Poate, J. M., Coffa, S.

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena von Jaraiz, M., Gilmer, G. H., Poate, J. M., de la Rubia, T. D.

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Density of amorphous Si von Custer, J. S., Thompson, Michael O., Jacobson, D. C., Poate, J. M., Roorda, S., Sinke, W. C., Spaepen, F.

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On the FinFET extension implant energy von Gossmann, H.-J.L., Agarwal, A., Parrill, T., Rubin, L.M., Poate, J.M.

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion von Stolk, P. A., Eaglesham, D. J., Gossmann, H.-J., Poate, J. M.

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Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon von MICHEL, J, BENTON, J. L, FERRANTE, R. F, JACOBSON, D. C, EAGLESHAM, D. J, FITZGERALD, E. A, XIE, Y.-H, POATE, J. M, KIMERLING, L. C

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Controlled atomic spontaneous emission from Er3+ in a transparent Si/SiO2 microcavity von VREDENBERG, A. M, HUNT, N. E. J, SCHUBERT, E. F, JACOBSON, D. C, POATE, J. M, ZYDZIK, G. J

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Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation von DONOVAN, E. P, SPAEPEN, F, TURNBULL, D, POATE, J. M, JACOBSON, D. C

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The electrical and defect properties of erbium-implanted silicon von BENTON, J. L, MICHEL, J, KIMERLING, L. C, JACOBSON, D. C, XIE, Y.-X, EAGLESHAM, D. J, FITZGERALD, E. A, POATE, J. M

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Optical doping of waveguide materials by MeV Er implantation von POLMAN, A, JACOBSON, D. C, EAGLESHAM, D. J, KISTLER, R. C, POATE, J. M

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Microstructure of erbium-implanted Si von Eaglesham, D. J., Michel, J., Fitzgerald, E. A., Jacobson, D. C., Poate, J. M., Benton, J. L., Polman, A., Xie, Y.-H., Kimerling, L. C.

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Poate, J. M., Luftman, H. S.

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities von GOSSMANN, H.-J, RAFFERTY, C. S, LUFTMAN, H. S, UNTERWALD, F. C, BOONE, T, POATE, J. M

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Iron gettering mechanisms in silicon von Benton, J. L., Stolk, P. A., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Ha, N. T., Haynes, T. E., Myers, S. M.

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GIANT ENHANCEMENT OF LUMINESCENCE INTENSITY IN ER-DOPED SI/SIO2 RESONANT CAVITIES von SCHUBERT, EF, VREDENBERG, AM, HUNT, NEJ, WONG, YH, BECKER, PC, POATE, JM, JACOBSON, DC, FELDMAN, LC, ZYDZIK, GJ

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