Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method von Thomas, Luc, Jan, Guenole, Le, Son, Wang, Po-Kang

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High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory von Iwata-Harms, Jodi M., Jan, Guenole, Liu, Huanlong, Serrano-Guisan, Santiago, Zhu, Jian, Thomas, Luc, Tong, Ru-Ying, Sundar, Vignesh, Wang, Po-Kang

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Non-contact induced thermal disturbance of MR head signals von Tian, Hong, Cheung, Chi-Yue, Wang, Po-Kang

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Observation of isolated carbon atoms and the study of their mobility on Pt clusters by NMR von PO-KANG WANG, ANSERMET, J.-P, SLICHTER, C. P, SINFELT, J. H

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NMR study of the chemisorption bond of carbon monoxide on platinum von RUDAZ, S. L, ANSERMET, J.-P, PO-KANG WANG, SLICHTER, C. P, SINFELT, J. H

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Effects of a highly permeable keeper layer on transition shifts for thin film media von Guo Mian, Po-Kang Wang, Reed, W.B., Zubeck, R., Hollars, D.

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NMR of platinum catalysts. I: Line shapes von RHODES, H. E, PO-KANG WANG, STOKES, H. T, SLICHTER, C. P

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NMR of platinum catalysts. III: Microscopic variation of the Knight shifts von STOKES, H. T, RHODES, H. E, PO-KANG WANG, SLICHTER, C. P, SINFELT, J. H

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Electrical testing apparatus for spintronics devices von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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NMR of platinum catalysts. II: Relaxation von RHODES, H. E, PO-KANG WANG, MAKOWKA, C. D, RUDAZ, S. L, STOKES, H. T, SLICHTER, C. P

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Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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Electrical testing apparatus for spintronics devices von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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Method and circuits for programming STT-MRAM cells for reducing back-hopping von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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DEVICES USING ADDRESSABLE MAGNETIC TUNNEL JUNCTION ARRAY TO DETECT MAGNETIC PARTICLES von SHI, Xizeng, YANG, Hsu, Kai, WANG, Po, Kang

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Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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Method and Circuits for Programming STT-MRAM Cells for Reducing Back-Hopping von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions von Shen, Dongna, Patel, Sahil, Wang, Po-Kang, Sundar, Vignesh, Tong, Ru-Ying, Wang, Yu-Jen, Jan, Guenole, Liu, Huanlong

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Methods and circuits for programming STT-MRAM cells for reducing back-hopping von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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Electrical Testing Apparatus for Spintronics Devices von Lee, Yuan-Jen, Zhu, Jian, Wang, Po-Kang, Jan, Guenole, Liu, Huanlong

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