Fabrication and performance of selective HSG storage cells for 256 Mb and 1 Gb DRAM applications von Banerjee, A., Wise, R.L., Plumton, D.L., Bevan, M., Pas, M.F., Crenshaw, D.L., Aoyama, S., Mansoori, M.M.

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An investigation of the Pd-In-Ge nonspiking Ohmic contact to n-GaAs using transmission line measurement, Kelvin, and Cox and Strack structures von WANG, L. C, WANG, X. Z, HSU, S. N, LAU, S. S, LIN, P. S. D, SANDS, T, SCHWARZ, S. A, PLUMTON, D. L, KUECH, T. F

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A low on-resistance, high-current GaAs power VFET von Plumton, D.L., Yuan, H.T., Kim, T.S., Taddiken, A.H., Ley, V., Kollman, R.L., Lagnado, I., Johnson, L.

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Implant and annealed ohmic contact to a thin quantum well von YANG, C. H, PLUMTON, D. L, LODENKAMPER, R, SHIH, H. D

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Suppression of void nucleation by injected interstitials during heavy ion bombardment von Plumton, D.L., Wolfer, W.G.

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Planar AlGaAs/GaAs HBT fabricated by MOCVD overgrowth with a grown base von Plumton, D.L., Yang, J.-Y., Morris, F.J., Lambert, S.A.

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The magnitude and distribution of the excess interstitial fraction during heavy ion irradiation von Plumton, D.L., Kulcinski, G.L.

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Comparison of self-aligned and non-self-aligned GaAs E/D MESFETs von Wan, C.-F., Shichijo, H., White, W.A., Hudgens, R.D., Plumton, D.L.

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Phase transformations in ion irradiated Ti-6242s alloys von Plumton, D.L., Kulcinski, G.L., Dodd, R.A.

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Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine von Kim, T. S., Bayraktaroglu, B., Henderson, T. S., Plumton, D. L.

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Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI2L technology von PLUMTON, D. L, CHANG, C. T. M, WOODS, B. O

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Conditions for the suppression of void formation during ion-bombardment von Plumton, D.L., Attaya, H., Wolfer, W.G.

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Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI(2)L technology von Plumton, D L, Chang, C T M, Woods, B O

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Radiation induced precipitation in 9 MeV Al ion irradiated Ti-6A1-4V von Plumton, D.L., Kulcinski, G.L., Dodd, R.A.

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Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI super(2)L technology von Plumton, D L, Chang, C T M, Woods, B O

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Organometallic vapor phase epitaxy of AlGaAs/GaAs hetorojunction bipolar transistors using tertiarybutylarsine von KIM, T. S, BAYARKTAROGLU, B, HENDERSON, T. S, PLUMTON, D. L

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The Magnitude and Distribution of the Excess Interstitial Fraction During Heavy Ion Irradiation von Plumton, D L, Kulcinski, G L

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Radiation Induced Precipitation in 9 MeV Aluminum Ion Irradiated Ti--6Al--4V von Plumton, D L, Kulcinski, G L, Dodd, R A

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Conditions for the Suppression of Void Formation During Ion Bombardment von Plumton, D L, Attaya, H, Wolfer, W G

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Radiation induced precipitation in 9 MeV Al ion irradiated Ti-6Al-4V von PLUMTON, D.L, KULCINSKI, G.L, DODD, R.A

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