GaN-based micro-LED arrays on flexible substrates for optical cochlear implants von Goßler, Christian, Bierbrauer, Colin, Moser, Rüdiger, Kunzer, Michael, Holc, Katarzyna, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim, Schwaerzle, Michael, Ruther, Patrick, Paul, Oliver, Neef, Jakob, Keppeler, Daniel, Hoch, Gerhard, Moser, Tobias, Schwarz, Ulrich T

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Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices von Reusch, Markus, Holc, Katarzyna, Pletschen, Wilfried, Kirste, Lutz, Žukauskaitė, Agnė, Yoshikawa, Taro, Iankov, Dimitre, Ambacher, Oliver, Lebedev, Vadim

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Reduced nonthermal rollover of wide-well GaInN light-emitting diodes von Maier, Markus, Köhler, Klaus, Kunzer, Michael, Pletschen, Wilfried, Wagner, Joachim

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Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation von Maroldt, Stephan, Haupt, Christian, Pletschen, Wilfried, Müller, Stefan, Quay, Rüdiger, Ambacher, Oliver, Schippel, Christian, Schwierz, Frank

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High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes von Passow, Thorsten, Gutt, Richard, Kunzer, Michael, Pletschen, Wilfried, Kirste, Lutz, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim

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GaN-based high-frequency devices and circuits: A Fraunhofer perspective von Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Cäsar, Markus, Müller, Stefan, van Raay, Friedbert, Kiefer, Rudolf, Brückner, Peter, Kühn, Jutta, Musser, Markus, Kirste, Lutz, Haupt, Christian, Pletschen, Wilfried, Lim, Taek, Aidam, Rolf, Mikulla, Michael, Ambacher, Oliver

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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy von Baeumler, Martina, Gütle, Frank, Polyakov, Vladimir, Cäsar, Markus, Dammann, Michael, Konstanzer, Helmer, Pletschen, Wilfried, Bronner, Wolfgang, Quay, Rüdiger, Waltereit, Patrick, Mikulla, Michael, Ambacher, Oliver, Bourgeois, Franck, Behtash, Reza, Riepe, Klaus J., van der Wel, Paul J., Klappe, Jos, Rödle, Thomas

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Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures von Linkohr, Stefanie, Pletschen, Wilfried, Polyakov, Vladimir, Himmerlich, Marcel, Lorenz, Pierre, Krischok, Stefan, Kirste, Lutz, Müller, Stefan, Ambacher, Oliver, Cimalla, Volker

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AlGaN/GaN epitaxy and technology von Waltereit, Patrick, Bronner, Wolfgang, Quay, Rüdiger, Dammann, Michael, Kiefer, Rudolf, Pletschen, Wilfried, Müller, Stefan, Aidam, Rolf, Menner, Hanspeter, Kirste, Lutz, Köhler, Klaus, Mikulla, Michael, Ambacher, Oliver

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Towards a deeper understanding of the reduced efficiency droop in low defect-density GaInN wide-well LEDs von Maier, Markus, Passow, Thorsten, Kunzer, Michael, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim

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Quaternary barriers for improved performance of GaN-based HEMTs von Lim, Taek, Aidam, Rolf, Waltereit, Patrick, Pletschen, Wilfried, Quay, Rüdiger, Kirste, Lutz, Ambacher, and Oliver

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Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs von Linkohr, Stefanie, Pletschen, Wilfried, Kirste, Lutz, Himmerlich, Marcel, Lorenz, Pierre, Krischok, Stefan, Polyakov, Vladimir, Müller, Stefan, Ambacher, Oliver, Cimalla, Volker

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Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer von Köhler, Klaus, Pletschen, Wilfried, Kirste, Lutz, Leone, Stefano, Müller, Stefan, Aidam, Rolf, Bronner, Wolfgang, Brückner, Peter, Waltereit, Patrick, Polyakov, Vladimir, Ambacher, Oliver

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Leakage mechanism in Al x Ga 1−x N/GaN heterostructures with AlN interlayer von Köhler, Klaus, Pletschen, Wilfried, Kirste, Lutz, Leone, Stefano, Müller, Stefan, Aidam, Rolf, Bronner, Wolfgang, Brückner, Peter, Waltereit, Patrick, Polyakov, Vladimir, Ambacher, Oliver

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Laser direct writing of GaN-based light-emitting diodes—The suitable laser source for mesa definition von Moser, Rüdiger, Goßler, Christian, Kunzer, Michael, Köhler, Klaus, Pletschen, Wilfried, Brunne, Jens, Schwarz, Ulrich T., Wagner, Joachim

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AlGaN-Based 355 nm UV Light-Emitting Diodes with High Power Efficiency von Gutt, Richard, Passow, Thorsten, Kunzer, Michael, Pletschen, Wilfried, Kirste, Lutz, Forghani, Kamran, Scholz, Ferdinand, Köhler, Klaus, Wagner, Joachim

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Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations von Heidrich, Nicola, Knöbber, Fabian, Polyakov, Vladimir, Cimalla, Volker, Pletschen, Wilfried, Sah, Ram Ekwal, Kirste, Lutz, Leopold, Steffen, Hampl, Stefan, Ambacher, Oliver, Lebedev, Vadim

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Processing of Nanoscale Gaps for Boron-doped Nanocrystalline Diamond Based MEMS von Iankov, Dimitre, Zuerbig, Verena, Pletschen, Wilfried, Giese, Christian, Iannucci, Robert, Ambacher, Oliver, Lebedev, Vadim

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Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side von Passow, Thorsten, Kunzer, Michael, Börner, Paul, Pletschen, Wilfried, Köhler, Klaus, Wagner, Joachim

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Evaluation of AlN material properties through vibration analysis of thin membranes von Lebedev, Vadim, Knöbber, Fabian, Heidrich, Nicola, Sah, Ram Ekwal, Pletschen, Wilfried, Cimalla, Volker, Ambacher, Oliver

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