Prevalence of Group A Rotavirus, Human Calicivirus, Astrovirus, and Adenovirus Type 40 and 41 Infections among Children with Acute Gastroenteritis in Dijon, France von BON, F, FASCIA, P, DAUVERGNE, M, TENENBAUM, D, PLANSON, H, PETION, A. M, POTHIER, P, KOHLI, E

Volltext

Determinants of activity in glutaredoxins: an in vitro evolved Grx1-like variant of Escherichia coli Grx3 von Elgán, Tobias H, Planson, Anne-Gaëlle, Beckwith, Jon, Güntert, Peter, Berndt, Kurt D

Volltext

Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs von Planson, Dominique, Asllani, Besar, Castellazzi, Alberto, Morel, Hervé

Volltext

OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K von Hamad, H, Planson, D, Raynaud, C, Bevilacqua, P

Volltext

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes von Hamad, H., Raynaud, C., Bevilacqua, P., Tournier, D., Vergne, B., Planson, D.

Volltext

High-Voltage SiC-JFET Fabrication and Full Characterization von Bevilacqua, Pascal, Zaoui, Abderrahime, Asllani, Besar, Morel, Hervé, Grosset, Gregory, Planson, Dominique

Volltext

Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes von Planson, Dominique, Bevilacqua, Pascal, Fonder, Jean Baptiste, Phung, Luong Viet, Choucoutou, Beverley, Asllani, Besar, Morel, Hervé

Volltext

Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode von Raynaud, Christophe, Bevilacqua, Pascal, Locatelli, Marie Laure, Hamad, Hassan, Phung, Luong Viet, Asllani, Besar, Arvinte, Roxana, Planson, Dominique

Volltext

Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Planson, D., Brylinski, C., Ferro, G.

Volltext

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices von Thierry-Jebali, Nicolas, Calvez, Cyril, Tournier, Dominique, Chailloux, Thibaut, Planson, Dominique

Volltext

Simulation and design of junction termination structures for diamond Schottky diodes von Thion, F., Isoird, K., Planson, D., Locatelli, M.-L., Ding, H.

Volltext

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures von Sejil, Selsabil, Brylinski, Christian, Morel, Hervé, Carole, Davy, Ferro, Gabriel, Lazar, Mihai, Planson, Dominique, Raynaud, Christophe, Laariedh, Farah

Volltext

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) von Lefranc, P., Planson, D., Morel, H., Bergogne, D.

Volltext

Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Co... von Planson, Dominique, Vo-Ha, Arthur, Brylinski, Christian, Henry, Anne, Ferro, Gabriel, Lazar, Mihai, Soulière, Véronique, Konczewicz, Leszek, Carole, Davy, Contreras, Sylvie, Brosselard, Pierre, Thierry-Jebali, Nicolas

Volltext

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications von Lazar, Mihai, Tournier, Dominique, Planson, Dominique, Raynaud, Christophe, Morel, Hervé, Brosselard, Pierre

Volltext

P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices von Lazar, Mihai, Sejil, Selsabil, Lalouat, L., Raynaud, Christophe, Carole, D., Planson, Dominique, Ferro, G., Laariedh, Farah, Brylinski, C., Morel, Hervé

Volltext

Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes von Raynaud, Christophe, Scharnholz, Sigo, Vang, H., Lazar, Mihai, Pâques, Gontran, Planson, Dominique

Volltext

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC von Raynaud, Christophe, Vang, Heu, Lazar, Mihai, Nguyen, Duy Minh, Planson, Dominique

Volltext

Determinants of Activity in Glutaredoxins: An in vitro evolved Grx1-like Variant of E. coli Grx3 von Elgán, Tobias H, Planson, Anne-Gaëlle, Beckwith, Jon, Güntert, Peter, Berndt, Kurt D

Volltext

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC von Oliviero, Erwan, Vang, Heu, Lazar, Mihai, Cremillieu, Pierre, Dubois, Christiane, Leclercq, Jean Louis, Dazord, Jacques, Planson, Dominique

Volltext