State of the art of high temperature power electronics von Buttay, Cyril, Planson, Dominique, Allard, Bruno, Bergogne, Dominique, Bevilacqua, Pascal, Joubert, Charles, Lazar, Mihai, Martin, Christian, Morel, Hervé, Tournier, Dominique, Raynaud, Christophe

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Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices von Raynaud, Christophe, Tournier, Dominique, Morel, Hervé, Planson, Dominique

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Extreme dielectric strength in boron doped homoepitaxial diamond von Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Koide, Yasuo, Jomard, François, Planson, Dominique, Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholz, Sigo

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Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications von Eric N’Dohi, Atse Julien, Sonneville, Camille, Phung, Luong Viet, Ngo, Thi Huong, De Mierry, Philippe, Frayssinet, Eric, Maher, Hassan, Tasselli, Josiane, Isoird, Karine, Morancho, Frédéric, Cordier, Yvon, Planson, Dominique

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Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode von Arbess, Houssam, Isoird, Karine, Hamady, Saleem, Zerarka, Moustafa, Planson, Dominique

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A Novel Isolation Approach for GaN-Based Power Integrated Devices von Zaidan, Zahraa, Al Taradeh, Nedal, Benjelloun, Mohammed, Rodriguez, Christophe, Soltani, Ali, Tasselli, Josiane, Isoird, Karine, Phung, Luong Viet, Sonneville, Camille, Planson, Dominique, Cordier, Yvon, Morancho, Frédéric, Maher, Hassan

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Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes von Rigaud-Minet, Florian, Raynaud, Christophe, Buckley, Julien, Charles, Matthew, Pimenta-Barros, Patricia, Gwoziecki, Romain, Gillot, Charlotte, Sousa, Véronique, Morel, Hervé, Planson, Dominique

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Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors von Rigaud-Minet, Florian, Buckley, Julien, Vandendaele, William, Charles, Matthew, Jaud, Marie-Anne, Rémont, Elise, Morel, Hervé, Planson, Dominique, Gwoziecki, Romain, Gillot, Charlotte, Sousa, Véronique

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Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode von N’Dohi, Atse Julien Eric, Sonneville, Camille, Saidi, Soufiane, Ngo, Thi Huong, De Mierry, Philippe, Frayssinet, Eric, Cordier, Yvon, Phung, Luong Viet, Morancho, Frédéric, Maher, Hassan, Planson, Dominique

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Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts von Zhang, Teng, Raynaud, Christophe, Planson, Dominique

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Edge Terminations for 4H-SiC Power Devices: A Critical Issue von Rebollo, José, Montserrat, Josep, Planson, Dominique, Godignon, Philippe

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Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode von Planson, Dominique, Zhang, Teng, Raynaud, Christophe

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Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes von Raja, P. Vigneshwara, Raynaud, Christophe, Asllani, Besar, Morel, Hervé, Planson, Dominique

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Advanced characterization of SiC devices by optical beam induced current (OBIC): Experimental and simulation results von Planson, Dominique, Tournier, Dominique, Sonneville, Camille, Bevilacqua, Pascal, Viet Phung, Luong, Morel, Hervé

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Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs von Ammar, Ali, Sonneville, Camille, Morel, Hervé, Phung, Luong Viet, Planson, Dominique

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Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications von Tournier, Dominique, Raynaud, Christophe, Brosselard, Pierre, Planson, Dominique, Lazar, Mihai, Morel, Hervé

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Investigation of SiC Thyristors with Varying Amplifying Gate Design von Bauersfeld, Dirk, Hassdorf, Ralf, Planson, Dominique, Scharnholz, Sigo, Vergne, Bertrand, Phung, Luong Viet

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First results on 1.2 kV SiC MOSFET body diode robustness tests von Hamad, Hassan, Tournier, Dominique, Reynes, Jean-Michel, Perrotin, Olivier, Trémouilles, David, Meuret, Régis, Planson, Dominique, Morel, Hervé

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Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs von Castellazzi, Alberto, Asllani, Besar, Planson, Dominique, Morel, Hervé

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V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs von Asllani, Besar, Fayyaz, Asad, Castellazzi, Alberto, Morel, Hervé, Planson, Dominique

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