OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K von Hamad, H, Planson, D, Raynaud, C, Bevilacqua, P

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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing von Lazar, M., Laariedh, F., Cremillieu, P., Planson, D., Leclercq, J.-L.

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High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer von Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Jomard, François, Planson, D., Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholtz, Sigo

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Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes von Thierry-Jebali, N., Hassan, J., Lazar, M., Planson, D., Bano, E., Henry, A., Janzén, E., Brosselard, P.

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Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing von Abi-Tannous, T., Soueidan, M., Ferro, G., Lazar, M., Toury, B., Beaufort, M.F., Barbot, J.F., Penuelas, J., Planson, D.

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Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes von Hamad, H., Raynaud, C., Bevilacqua, P., Tournier, D., Vergne, B., Planson, D.

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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H-SiC von Laariedh, F, Lazar, M, Cremillieu, P, Penuelas, J, Leclercq, J-L, Planson, D

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Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions von Sejil, S., Lazar, M., Carole, D., Brylinski, C., Planson, D., Ferro, G., Raynaud, C.

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Understanding the growth of p-doped 4H-SiC layers using vapour–liquid–solid transport von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Thierry-Jebali, N., Brosselard, P., Planson, D., Brylinski, C., Ferro, G.

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Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier von Berthou, M., Godignon, P., Montserrat, J., Millan, J., Planson, D.

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Optical triggering of SiC thyristors using UV LEDs von DHEILLY, N, PAQUES, G, SCHARNHOLZ, S, BEVILACQUA, P, RAYNAUD, C, NGUYEN, D.-M, DE DONCKER, R. W, PLANSON, D

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4H-silicon carbide thin junction based ultraviolet photodetectors von Biondo, S., Lazar, M., Ottaviani, L., Vervisch, W., Le Borgne, V., El Khakani, M.A., Duchaine, J., Milesi, F., Palais, O., Planson, D.

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Experimental determination of impact ionization coefficients in 4H-SiC von Nguyen, D.M., Raynaud, C., Dheilly, N., Lazar, M., Tournier, D., Brosselard, P., Planson, D.

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Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase von Vo-Ha, A., Carole, D., Lazar, M., Tournier, D., Cauwet, F., Soulière, V., Planson, D., Brylinski, C., Ferro, G.

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Edge Terminations for 4H-SiC Power Devices: A Critical Issue von Rebollo, José, Montserrat, Josep, Planson, Dominique, Godignon, Philippe

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Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET von Planson, D., Brosselard, P., Grosset, G., Tournier, D., Dupuy, L., Chevalier, Florian

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Simulation and design of junction termination structures for diamond Schottky diodes von Thion, F., Isoird, K., Planson, D., Locatelli, M.-L., Ding, H.

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Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) von Lefranc, P., Planson, D., Morel, H., Bergogne, D.

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Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs von Castellazzi, Alberto, Asllani, Besar, Planson, Dominique, Morel, Hervé

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4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method von Sonneville, Camille, Planson, Dominique, Brosselard, Pierre, Tournier, Dominique, Bevilacqua, Pascal, Asllani, Besar, Phung, Luong Viet

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