Ultrathin strained si-on-insulator and sige-on-insulator created using low temperature wafer bonding and metastable stop layers von TARASCHI, Gianni, PITERA, Arthur J, MCGILL, Lisa M, CHENG, Zhi-Yuan, LEE, Minjoo L, LANGDO, Thomas A, FITZGERALD, Eugene A

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Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers von Groenert, Michael E., Leitz, Christopher W., Pitera, Arthur J., Yang, Vicky, Lee, Harry, Ram, Rajeev J., Fitzgerald, Eugene A.

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Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques von Taraschi, Gianni, Pitera, Arthur J., Fitzgerald, Eugene A.

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Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications von Pitera, Arthur J., Fitzgerald, E. A.

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Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1−x buffer layers von Groenert, Michael E., Pitera, Arthur J., Ram, Rajeev J., Fitzgerald, Eugene A.

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Positive temperature coefficient of impact ionization in strained-Si von Waldron, N.S., Pitera, A.J., Lee, M.L., Fitzgerald, E.A., del Alamo, J.A.

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Strained-Silicon on Silicon and Strained-Silicon on Silicon-Germanium on Silicon by Relaxed Buffer Bonding von Isaacson, David M., Taraschi, Gianni, Pitera, Arthur J., Ariel, Nava, Langdo, Thomas A., Fitzgerald, Eugene A.

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Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI) von Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L, Pitera, Arthur J, Hoyt, Judy L, Antoniadis, Dimitri A, Fitzgerald, Eugene A

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Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si 0.4 Ge 0.6 /Ge for layer exfoliation applications von Pitera, Arthur J., Fitzgerald, E. A.

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Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications von Isaacson, David M., Pitera, Arthur J., Fitzgerald, Eugene A.

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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs von Nayfeh, H.M., Leitz, C.W., Pitera, A.J., Fitzgerald, E.A., Hoyt, J.L., Antoniadis, D.A.

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Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor deposition von Lee, Minjoo L., Pitera, Arthur J., Fitzgerald, E. A.

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Monolithically integrated thin film III-V/Si solar panel on wafer for active power management von Pitera, A. J., Hennessy, J., Malonis, A. C., Fitzgerald, E. A., Ringel, S. A.

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Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1-xGex/Si virtual substrates von PITERA, Arthur J, TARASCHI, G, LEE, M. L, LEITZ, C. W, CHENG, Z.-Y, FITZGERALD, E. A

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Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface von Zhiyuan Cheng, Pitera, A.J., Lee, M.L., Jongwan Jung, Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.

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Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding Ge/Si[sub 1−x]Ge[sub x]/Si Virtual Substrates von Pitera, Arthur J., Taraschi, G., Lee, M. L., Leitz, C. W., Cheng, Z.-Y., Fitzgerald, E. A.

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INTERPOSER WITH FIRST AND SECOND ADHESIVE LAYERS von Bowen, M. Shane, Yuan, Dajun, Zimmerley, Maxwell, Modiano, Steven H, Kreindl, Gerald, Tran, Hai Quang, Qiang, LiangLiang, Smith, Randall, Pitera, Arthur J

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Interposer with first and second adhesive layers von Bowen, M. Shane, Yuan, Dajun, Zimmerley, Maxwell, Modiano, Steven H, Kreindl, Gerald, Tran, Hai Quang, Qiang, LiangLiang, Smith, Randall, Pitera, Arthur J

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INTERPOSER WITH FIRST AND SECOND ADHESIVE LAYERS von LIANGLIANG QIANG, GERALD KREINDL, RANDALL SMITH, DAJUN YUAN, M. SHANE BOWEN, HAI QUANG TRAN, STEVEN H MODIANO, MAXWELL ZIMMERLEY, ARTHUR J PITERA

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Interposer with first and second adhesive layers von SMITH, Randall, TRAN, Hai Quang, PITERA, Arthur J, KREINDL, Gerald, YUAN, Dajun, ZIMMERLEY, Maxwell, QIANG, LiangLiang, MODIANO, Steven H, BOWEN, M. Shane

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