Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices von Yates, Luke, Anderson, Jonathan, Gu, Xing, Lee, Cathy, Bai, Tingyu, Mecklenburg, Matthew, Aoki, Toshihiro, Goorsky, Mark S, Kuball, Martin, Piner, Edwin L, Graham, Samuel

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Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD von Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Nazari, Mohammad, Yates, Luke, Graham, Samuel, Holtz, Mark, Piner, Edwin L

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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiNx Passivation Layer von Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Holtz, Mark, Piner, Edwin L

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Observation of terahertz radiation coherently generated by acoustic waves von Kim, Ki-Yong, Glownia, James H, Piner, Edwin L, Armstrong, Michael R, Howard, William M, Roberts, John C, Reed, Evan J

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Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by In Situ Tailoring the SiN x Passivation Layer von Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Holtz, Mark, Piner, Edwin L

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Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs von Siddique, Anwar, Ahmed, Raju, Anderson, Jonathan, Piner, Edwin L.

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Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs von Chung, J.W., Roberts, J.C., Piner, E.L., Palacios, T.

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Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition von Nugera, Florence A., Devkota, Dipa, Anupam, K. C., Ayala, Anival, Aryal, Ganesh, Engdahl, Chris, Piner, Edwin L., Holtz, Mark W.

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Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding von Ryu, K. K., Roberts, J. C., Piner, E. L., Palacios, T.

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Self-Heating Profile in an AlGaN/GaN Heterojunction Field-Effect Transistor Studied by Ultraviolet and Visible Micro-Raman Spectroscopy von Nazari, Mohammad, Hancock, Bobby Logan, Piner, Edwin L., Holtz, Mark W.

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Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate von Bin Lu, Piner, Edwin L, Palacios, Tomas

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RF Dielectric Loss Due to MOCVD Aluminum Nitride on High Resistivity Silicon von Berber, Feyza, Johnson, Derek W., Sundqvist, Kyle M., Piner, Edwin L., Huff, Gregory H., Rusty Harris, H.

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HAADF-STEM Study of Filament Material in Hot Filament CVD Diamond Films von Anderson, Jonathan, Ahmed, Raju, Siddique, Anwar, Piner, Edwin L.

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Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors von Bin Lu, Piner, E.L., Palacios, T.

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Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology von Johnson, Derek W., Lee, Rinus T. P., Hill, Richard J. W., Man Hoi Wong, Bersuker, Gennadi, Piner, Edwin L., Kirsch, Paul D., Harris, H. Rusty

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N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology von Chung, J.W., Piner, E.L., Palacios, T.

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Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability von Chunhua Zhou, Chen, W, Piner, Edwin L, Chen, Kevin J

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PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures von Gatabi, Iman Rezanezhad, Johnson, Derek W., Woo, Jung Hwan, Anderson, Jonathan W., Coan, Mary R., Piner, Edwin L., Harris, Harlan Rusty

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Hexagonal boron nitride particles for determining the thermal conductivity of diamond films based on near-ultraviolet micro-Raman mapping von Squires, Brian, Hancock, B Logan, Nazari, Mohammad, Anderson, Jonathan, Hobart, Karl D, Feygelson, Tatyana I, Tadjer, Marko J, Pate, Bradford B, Anderson, Travis J, Piner, Edwin L, Holtz, Mark W

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Preferentially oriented growth of diamond films on silicon with nickel interlayer von K.C., Anupam, Siddique, Anwar, Anderson, Jonathan, Saha, Rony, Gautam, Chhabindra, Ayala, Anival, Engdahl, Chris, Holtz, Mark W., Piner, Edwin L.

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