High-power 10-GHz operation of AlGaN HFET's on insulating SiC von Sullivan, G.J., Chen, M.Y., Higgins, J.A., Yang, J.W., Chen, Q., Pierson, R.L., McDermott, B.T.

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Characterization of AlxGa1−xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy von Rosenthal, P. A., Yu, E. T., Pierson, R. L., Zampardi, P. J.

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Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design von Zampardi, P.J., Chang, C.E., Fitzsimmons, S., Pierson, R.L., McDermott, B.T., Chen, P.F., Asbeck, P.

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Thermal design and simulation of bipolar integrated circuits von Poulton, K., Knudesn, K.L., Corcoran, J.J., Wang, K.-C., Pierson, R.L., Nubling, R.B., Chang, M.-C.F.

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High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base von Wang, G.-W., Pierson, R.L., Asbeck, P.M., Wang, K.-C., Wang, N.-L., Nubling, R., Chang, M.F., Salerno, J., Sastry, S.

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High-bandwidth OEIC receivers using heterojunction bipolar transistors: Design and demonstration von Pedrotti, K.D., Pierson, R.L., Sheng, N.H., Nubling, R.B., Farley, C.W., Chang, M.F.

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AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems von Runge, K., Daniel, D., Standley, R.D., Gimlett, J.L., Nubling, R.B., Pierson, R.L., Beccue, S.M., Wang, K.-C., Sheng, N.-H., Chang, M.C.-F., Chen, D.M., Asbeck, P.M.

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Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications von Pin-Fan Chen, Hsin, U.-M.T., Welty, R.J., Asbeck, P.M., Pierson, R.L., Zampardi, P.J., Ho, W.-J., Vincent Ho, M.C., Chang, M.F.

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A high-speed multimodulus HBT prescaler for frequency synthesizer applications von Sheng, N.-H., Pierson, R.L., Wang, K.-C., Nubling, R.B., Asbeck, P.M., Chang, M.-C.F., Edwards, W.L., Philips, D.E.

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Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy von Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

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High-speed 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs HBTs von Nubling, R.B., Yu, J., Wang, K.-C., Asbeck, P.M., Sheng, N.-H., Chang, M.-C.F., Pierson, R.L., Sullivan, G.J., McDonald, M.A., Price, A.J., Chen, A.D.M.

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Circuit demonstrations in a GaAs BiFET technology von Zampardi, P.J, Beccue, S.M, Yu, J, Pedrotti, K, Pierson, R.L, Ho, W.J, Chang, M.F, Wang, K.C

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A 6-b, 4 GSa/s GaAs HBT ADC von Poulton, K., Knudsen, K.L., Corcoran, J.J., Keh-Chung Wang, Nubling, R.B., Pierson, R.L., Chang, M.-C.F., Asbeck, P.M., Huang, R.T.

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High performance Al0.35Ga0.65As/GaAs HBT's von Welser, R.E, Pan, N, Lutz, C.R, Vu, D.P, Zampardi, P.J, Pierson, R.L, McDermott, B.T

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A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors von Wang, K.-C., Asbeck, P.M., Chang, M.-C.F., Nubling, R.B., Pierson, R.L., Sheng, N.-H., Sullivan, G.J., Yu, J., Chen, A., Clement, D., Tsen, T.C., Basit, H.F., George, J.D., Young, R.

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GaAs CCD's with transparent (ITO) gates for imaging and optical signal processing von Sahai, R., Pierson, R.L., Anderson, R.J., Martin, E.H., Sovero, E.A., Higgons, J.A.

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Ballistic-electron-emission microscopy and spectroscopy of metal/GaN interfaces von Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

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A novel optical effect in InGaP compound collector heterojunction bipolar transistors von Zampardi, P.J., Pierson, R.L.

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Heterostructure-based high-speed/high-frequency electronic circuit applications von Zampardi, P.J., Runge, K., Pierson, R.L., Higgins, J.A., Yu, R., McDermott, B.T., Pan, N.

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A packaged broad-band monolithic variable gain amplifier implemented in AlGaAs/GaAs HBT technology von Ruai Yu, Beccue, S., Zampardi, P.J., Pierson, R.L., Petersen, A., Wang, K.C., Bowers, J.E.

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