Second-harmonic generation in silicon waveguides strained by silicon nitride von Cazzanelli, M., Bianco, F., Borga, E., Pucker, G., Ghulinyan, M., Degoli, E., Luppi, E., Véniard, V., Ossicini, S., Modotto, D., Wabnitz, S., Pierobon, R., Pavesi, L.

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs von Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E.

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Performance evaluation of a Schottky SiC power diode in a boost PFC application von Spiazzi, G., Buso, S., Citron, M., Corradin, M., Pierobon, R.

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Two-dimensional micro-Raman mapping of stress and strain distributions in strained silicon waveguides von Bianco, F, Fedus, K, Enrichi, F, Pierobon, R, Cazzanelli, M, Ghulinyan, M, Pucker, G, Pavesi, L

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Investigation of luminescent dye-doped or rare-earth-doped monodisperse silica nanospheres for DNA microarray labelling von Enrichi, F., Riccò, R., Meneghello, A., Pierobon, R., Cretaio, E., Marinello, F., Schiavuta, P., Parma, A., Riello, P., Benedetti, A.

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors von Kordoš, P., Bernát, J., Marso, M., Lüth, H., Rampazzo, F., Tamiazzo, G., Pierobon, R., Meneghesso, G.

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Richardson’s constant in inhomogeneous silicon carbide Schottky contacts von Roccaforte, Fabrizio, La Via, Francesco, Raineri, Vito, Pierobon, Roberto, Zanoni, Enrico

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Enhancing the Sensitivity of DNA Microarray Using Dye-Doped Silica Nanoparticles: Detection of Human Papilloma Virus von Enrichi, F, Ricco, R, Meneghello, A, Pierobon, R, Canton, G, Cretaio, E

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Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution von Porti, M., Gerardin, S., Nafrı´a, M., Aymerich, X., Cester, A., Paccagnella, A., Schiavuta, P., Pierobon, R.

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Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights von La Via, Francesco, Raineri, Vito, Pierobon, R., Zanoni, E., Roccaforte, Fabrizio, Meneghesso, G.

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Hot carrier aging degradation phenomena in GaN based MESFETs von RAMPAZZO, F, PIEROBON, R, PACETTA, D, GAQUIERE, C, THERON, D, BOUDART, B, MENEGHESSO, G, ZANONI, E

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Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts von Roccaforte, F, La Via, F, Raineri, V, Pierobon, R, Zanoni, E

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Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC von Meneghesso, G., Pierobon, R., Rampazzo, F., Tamiazzo, G., Zanoni, E., Bernat, J., Kordos, P., Basile, A.F., Chini, A., Verzellesi, G.

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Second-harmonic generation in silicon waveguides strained by silicon nitride von Cazzanelli, M., Bianco, F., Borga, E., Pucker, G., Ghulinyan, M., Degoli, E., Luppi, E., Véniard, V., Ossicini, S., Modotto, D., Wabnitz, S., Pierobon, R., Pavesi, L.

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Low current dispersion and low bias-stress degradation of unpassivated GaN/AlGaN/GaN/SiC HEMTs von Bernát, J., Pierobon, R., Marso, M., Flynn, J., Brandes, G., Meneghesso, G., Zanoni, E., Kordoš, P.

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Study of breakdown dynamics in InAlAs/InGaAs/InP hemts with gate length scaling down to 80 nm von PIEROBON, R, RAMPAZZO, F, CLONFERO, F, DE PELLEGRIN, T, BERTAZZO, M, MENEGHESSO, G, ZANONI, E, SUEMITSU, T, ENOKI, T

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Influence of gate-leakage current on drain current collapse of unpassivated Ga N ∕ Al Ga N ∕ Ga N high electron mobility transistors von Kordoš, P., Bernát, J., Marso, M., Lüth, H., Rampazzo, F., Tamiazzo, G., Pierobon, R., Meneghesso, G.

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Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts von La Via, Francesco, Raineri, Vito, Pierobon, R., Roccaforte, Fabrizio, Zanoni, E.

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Degradation mechanisms of GaN-based LEDs after accelerated DC current aging von Meneghesso, G., Levada, S., Pierobon, R., Rampazzo, F., Zanoni, E., Cavallini, A., Castaldini, A., Scamarcio, G., Du, S., Eliashevich, I.

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Performance evaluation of a Schottky SiC power diode in a boost PFC application von Spiazzi, G., Buso, S., Citron, M., Corradin, M., Pierobon, R.

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