The local metallicity of gadolinium doped compound semiconductors von Colón Santana, J A, Liu, Pan, Wang, Xianjie, Tang, J, McHale, S R, Wooten, D, McClory, J W, Petrosky, J C, Wu, J, Palai, R, Losovjy, Ya B, Dowben, P A

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The K-shell Auger electron spectrum of gadolinium obtained using neutron capture in a solid state device von Schultz, David, Blasy, Bryan, Santana, Juan Colon, Young, Chris, Petrosky, J C, McClory, J W, LaGraffe, D, Brand, J I, Tang, Jinke, Wang, Wendong, Schemm, N, Balkir, S, Bauer, M, Ketsman, I, Fairchild, R W, Losovyj, Ya B, Dowben, P A

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Gamma and X-ray sensitivity of Gd2O3 heterojunctions von Colón Santana, Juan A., Young, C.M., McClory, J.W., Petrosky, J.C., Wang, X., Liu, P., Tang, Jinke, Adamiv, V.T., Burak, Ya.V., Fukutani, Keisuke, Dowben, P.A.

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Inhibiting laser oxidation of UO2 via Th substitution von Rickert, K., Prusnick, T.A., Hunt, E., Kimani, M.M., Chastang, S., Brooks, D.L., Moore, E.A., Petrosky, J.C., Mann, J.M.

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Identification of electron and hole traps in lithium tetraborate ( Li 2 B 4 O 7 ) crystals: Oxygen vacancies and lithium vacancies von Swinney, M. W., McClory, J. W., Petrosky, J. C., Yang, Shan, Brant, A. T., Adamiv, V. T., Burak, Ya V., Dowben, P. A., Halliburton, L. E.

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Electronic structure of hydrothermally synthesized single crystal U0.22Th0.78O2 von Turner, D. B., Kelly, T. D., Peterson, G. R., Reding, J. D., Hengehold, R. L., Mann, J. M., Kolis, J. W., Zhang, X., Dowben, P. A., Petrosky, J. C.

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Electromagnetic Interference and Electrical Conductivity Characteristics of Carbon/Polycyanate Composite with Nanostrands™ Under Tensile Load von MALL, S, HARDER, B. T, PETROSKY, J. C, HANSEN, G, ALEXANDER, M. D, HANSEN, N. D

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Electromagnetic Interference and Ionizing Radiation Effects on CMOS Devices von Estep, N. A., Petrosky, J. C., McClory, J. W., Kim, Y., Terzuoli, A. J.

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Rare earth 4f hybridization with the GaN valence band von Wang, Lu, Mei, Wai-Ning, McHale, S R, McClory, J W, Petrosky, J C, Wu, J, Palai, R, Losovyj, Y B, Dowben, P A

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EXAFS and EPR analysis of the local structure of Mn-doped Li2B4O7 von Kelly, T. D., Kong, L., Buchanan, D. A., Brant, A. T., Petrosky, J. C., McClory, J. W., Adamiv, V. T., Burak, Y. V., Dowben, P. A.

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The unoccupied electronic structure characterization of hydrothermally grown ThO2 single crystals von Kelly, T. D., Petrosky, J. C., Turner, D., McClory, J. W., Mann, J. M., Kolis, J. W., Zhang, Xin, Dowben, P. A.

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Analysis of oxygen shell splitting in hydrothermally grown single crystal ThO2(200) von Kelly, T. D., Petrosky, J. C., McClory, J. W., Mann, J. M., Kolis, J. W.

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The effective surface Debye temperature of Yb:GaN von McHale, S.R., McClory, J.W., Petrosky, J.C., Wu, J., Palai, R., Dowben, P.A., Ketsman, I.

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The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs von Moran, J.T., McClory, J.W., Petrosky, J.C., Farlow, G.C.

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Schottky barrier formation at the Au to rare earth doped GaN thin film interface von McHale, S.R., McClory, J.W., Petrosky, J.C., Wu, J., Rivera, A., Palai, R., Losovyj, Ya.B., Dowben, P.A.

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Resonant photoemission of rare earth doped GaN thin films von McHale, S.R., McClory, J.W., Petrosky, J.C., Wu, J., Palai, R., Losovyj, Ya.B., Dowben, P.A.

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Non-charge related mechanism affecting capacitive MEMS switch lifetime von Kucko, J.F., Petrosky, J.C., Reid, J.R., Yung Kee Yeo

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Electron and hole traps in Ag-doped lithium tetraborate (Li 2 B 4 O 7 ) crystals von Brant, A. T., Kananan, B. E., Murari, M. K., McClory, J. W., Petrosky, J. C., Adamiv, V. T., Burak, Ya V., Dowben, P. A., Halliburton, L. E.

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Use of Centrifuge for Pretreatment of Combined Wastewaters from a Plasticizer Manufacturing Facility von Petrosky, Curtis J., Vidic, Radisav D.

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Temperature Dependent Electrical Characteristics of Neutron Irradiated AlGaN/GaN HFETs von McClory, J.W., Petrosky, J.C.

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