14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications von Peng, M.Z., Zheng, Y.K., Luo, W.J., Liu, X.Y.

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Post-process thermal treatment for microwave power improvement of AlGaN/GaN HEMTs von Peng, M.Z., Zheng, Y.K., Wei, K., Liu, X.Y.

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Genetic effects on Fe, Zn, Mn and P contents in Indica black pericarp rice and their genetic correlations with grain characteristics von ZHANG, M. W, GUO, B. J, PENG, Z. M

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Characterization of a-plane InN film grown on r-plane sapphire by MOCVD von Zhu, X.L., Guo, L.W., Peng, M.Z., Ge, B.H., Zhang, J., Ding, G.J., Jia, H.Q., Chen, H., Zhou, J.M.

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Multi-harmonic measurements of line shape under low absorption conditions von Lan, L. J., Ding, Y. J., Peng, Z. M., Du, Y. J., Liu, Y. F., Li, Z.

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Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices von PENG, M. Z, GUO, L. W, ZHANG, J, ZHU, X. L, YU, N. S, YAN, J. F, LIU, H. H, JIA, H. Q, CHEN, H, ZHOU, J. M

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Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition von Zhu, X.L., Guo, L.W., Yu, N.S., Yan, J.F., Peng, M.Z., Zhang, J., Jia, H.Q., Chen, H., Zhou, J.M.

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Shock Tube Experimental Studies on CH/Visible Light/Pressure as Ignition Delay Criteria von Xiong, X. H., Ding, Y. J., Li, Q., Peng, Z. M.

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Calibration-free wavelength modulation for gas sensing in tunable diode laser absorption spectroscopy von Lan, L. J., Ding, Y. J., Peng, Z. M., Du, Y. J., Liu, Y. F.

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Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN von Peng, M.Z., Guo, L.W., Zhang, J., Yu, N.S., Zhu, X.L., Yan, J.F., Wang, Y., Jia, H.Q., Chen, H., Zhou, J.M.

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Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching von Yu, N.S., Guo, L.W., Chen, H., Xing, Z.G., Ge, B.H., Wang, J., Zhu, X.L., Peng, M.Z., Yan, J.F., Jia, H.Q., Zhou, J.M.

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Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1−xN/GaN HEMTs von Peng, M.Z., Zheng, Y.K., Ge, Q., Wei, K., Liu, X.Y.

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Size dependence of Curie temperature in Co+ ion implanted ZnO nanowires von Liao, L, Li, J C, Wang, D F, Liu, C, Peng, M Z, Zhou, J M

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Characteristics of silent B1 mode in AlxGa1-xN alloys observed by Raman scattering von Peng, M Z, Guo, L W, Zhang, J, Zhu, X L, Yu, N S, Yan, J F, Jia, H Q, Chen, H, Zhou, J M

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Optical periodicity analysis for radio selected BL Lacertae objects (RBLs) von Fan, J. H., Lin, R. G., Xie, G. Z., Zhang, L., Mei, D. C., Su, C. Y., Peng, Z. M.

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Composition Design and Ageing of Ni-Mn-Ga Alloys von Hsu, T.Y., Allen, Samuel M., Jin, Xue Jun, O'Handley, Robert C., Peng, Z.M.

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Genetic effects on grain characteristics of indica black rice and their uses on indirect selections for some mineral element contents in grains von Zhang, M.W, Guo, B.J, Peng, Z.M

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Genetic Effects on Grain Characteristics of indica Black Rice and their Useson Indirect Selections for some Mineral Element Contents in Grains von Zhang, M W, Guo, B J, Peng, Z M

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Growth and characterization of AlGaN∕GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy von Mei, F., Fu, Q. M., Peng, T., Liu, C., Peng, M. Z., Zhou, J. M.

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Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer von Chen, Y., Jiang, Y., Xu, P.Q., Ma, Z.G., Wang, X.L., He, T., Peng, M.Z., Luo, W.J., Liu, X.Y., Wang, L., Jia, H.Q., Chen, H.

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