Direct bandgap quantum wells in hexagonal Silicon Germanium von Peeters, Wouter H. J., van Lange, Victor T., Belabbes, Abderrezak, van Hemert, Max C., Jansen, Marvin Marco, Farina, Riccardo, van Tilburg, Marvin A. J., Verheijen, Marcel A., Botti, Silvana, Bechstedt, Friedhelm, Haverkort, Jos. E. M., Bakkers, Erik P. A. M.

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Stimulated emission from hexagonal silicon-germanium nanowires von van Tilburg, Marvin A. J., Farina, Riccardo, van Lange, Victor T., Peeters, Wouter H. J., Meder, Steffen, Jansen, Marvin M., Verheijen, Marcel A., Vettori, M., Finley, Jonathan J., Bakkers, Erik. P. A. M., Haverkort, Jos. E. M.

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Polarized emission from hexagonal-silicon–germanium nanowires von van Tilburg, Marvin A. J., Peeters, Wouter H. J., Vettori, Marco, van Lange, Victor T., Bakkers, Erik P. A. M., Haverkort, Jos E. M.

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Stemless InSb nanowire networks and nanoflakes grown on InP von Rossi, Marco, van Schijndel, Teun A J, Lueb, Pim, Badawy, Ghada, Jung, Jason, Peeters, Wouter H J, Kölling, Sebastian, Moutanabbir, Oussama, Verheijen, Marcel A, Bakkers, Erik P A M

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Finger and forehead photoplethysmography-derived pulse-pressure variation and the benefits of baseline correction von Sun, Shaoxiong, Peeters, Wouter H., Bezemer, Rick, Long, Xi, Paulussen, Igor, Aarts, Ronald M., Noordergraaf, Gerrit J.

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Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H von Vincent, Laetitia, Fadaly, Elham M. T., Renard, Charles, Peeters, Wouter H. J., Vettori, Marco, Panciera, Federico, Bouchier, Daniel, Bakkers, Erik P. A. M, Verheijen, Marcel A.

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Nanosecond Carrier Lifetime of Hexagonal Ge von van Lange, Victor T., Dijkstra, Alain, Fadaly, Elham M. T., Peeters, Wouter H. J., van Tilburg, Marvin A. J., Bakkers, Erik P. A. M., Bechstedt, Friedhelm, Finley, Jonathan J., Haverkort, Jos E. M.

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On algorithms for calculating arterial pulse pressure variation during major surgery von Sun, Shaoxiong, Peeters, Wouter H, Bezemer, Rick, Long, Xi, Paulussen, Igor, Aarts, Ronald M, Noordergraaf, Gerrit J

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Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers von Berghuis, Wilhelmus J. H. Willem-Jan, van Tilburg, Marvin A. J., Peeters, Wouter H. J., van Lange, Victor T., Farina, Riccardo, Fadaly, Elham M. T., Renirie, Elsa C. M., Theeuwes, Roel J., Verheijen, Marcel. A., Macco, Bart, Bakkers, Erik P. A. M., Haverkort, Jos E. M., Kessels, Wilhelmus M. M. Erwin

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Detection of a spontaneous pulse in photoplethysmograms during automated cardiopulmonary resuscitation in a porcine model von Wijshoff, Ralph W.C.G.R, van der Sar, Toeno, Peeters, Wouter H, Bezemer, Rick, Aelen, Paul, Paulussen, Igor W.F, Ordelman, Simone C.M.A, Venema, Alyssa, van Berkom, Paul F.J, Aarts, Ronald M, Woerlee, Pierre H, Scheffer, Gert-Jan, Noordergraaf, Gerrit J

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2H–Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core–Shell Nanowires von Rovaris, Fabrizio, Peeters, Wouter H. J., Marzegalli, Anna, Glas, Frank, Vincent, Laetitia, Miglio, Leo, Bakkers, Erik P. A. M., Verheijen, Marcel A., Scalise, Emilio

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Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowires von Peeters, Wouter H. J., Vettori, Marco, Fadaly, Elham M. T., Danescu, Alexandre, Mao, Chenyang, Verheijen, Marcel A., Bakkers, Erik P. A. M.

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Single-crystalline PbTe film growth through reorientation von Jung, Jason, Schellingerhout, Sander G., van der Molen, Orson A. H., Peeters, Wouter H. J., Verheijen, Marcel A., Bakkers, Erik P. A. M.

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Single-crystalline PbTe film growth through reorientation von Jung, Jason, Schellingerhout, Sander G, van der Molen, Orson A. H, Peeters, Wouter H. J, Verheijen, Marcel A, Bakkers, Erik P. A. M

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Growth-related formation mechanism of I$_3$-type basal stacking fault in epitaxially grown hexagonal Ge-2H von Vincent, Laetitia, Fadaly, Elham M. T, Renard, Charles, Peeters, Wouter H. J, Vettori, Marco, Panciera, Federico, Bouchier, Daniel, Bakkers, Erik PA. M, Verheijen, Marcel A

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Single-crystalline PbTe film growth through reorientation von Jung, Jason, Schellingerhout, Sander G, Orson A H van der Molen, Peeters, Wouter H J, Verheijen, Marcel A, Erik P A M Bakkers

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Growth-related formation mechanism of I\(_3\)-type basal stacking fault in epitaxially grown hexagonal Ge-2H von Vincent, Laetitia, Fadaly, Elham M T, Renard, Charles, Peeters, Wouter H J, Vettori, Marco, Panciera, Federico, Bouchier, Daniel, Erik PA M Bakkers, Verheijen, Marcel A

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AN APPARATUS FOR USE IN INDUCTIVE SENSING von STEUNEBRINK TIM PATRICK, KLEIJNEN MARK P P, PEETERS WOUTER H, DOODEMAN GERARDUS J N, BEZEMER RICK

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INDUCTIVE SENSING DEVICE AND METHOD von GROSFELD RONNY H J, KLEIJNEN MARK P P, PEETERS WOUTER H, DOODEMAN GERARDUS J N, LEIJSSEN JACOBUS J, BEZEMER RICK

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DEVICE AND METHOD FOR USE IN INDUCTIVE SENSING von GROSFELD RONNY H J, KLEIJNEN MARK P P, DOODEMAN GERARDUS J N, PEETERS WOUTER H, LEIJSSEN JACOBUS J, BEZEMER RICK

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