Supercooling and nucleation of silicon after laser melting von STIFFLER, S. R, THOMPSON, M. O, PEERCY, P. S

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Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation von THOMPSON, M. O, GALVIN, G. J, MAYER, J. W, PEERCY, P. S, POATE, J. M, JACOBSON, D. C, CULLIS, A. G, CHEW, N. G

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Solute trapping: comparison of theory with experiment von AZIZ, M. J, TSAO, J. Y, THOMPSON, M. O, PEERCY, P. S, WHITE, C. W

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The drive to miniaturization von Peercy, Paul S

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Oxygen ion irradiation of Tl2Ca2Ba2Cu3O10 superconductors von BARBOUR, J. C, KWAK, J. F, GINLEY, D. S, PEERCY, P. S

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Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn von Hoglund, D.E., Aziz, M.J., Stiffler, S.R., Thompson, Michael O., Tsao, J.Y., Peercy, P.S.

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Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerations von GALVIN, G. J, MAYER, J. W, PEERCY, P. S

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Direct measurements of liquid/solid interface kinetics during pulsed-laser-induced melting of aluminum von TSAO, J. Y, PICRAUX, S. T, PEERCY, P. S, THOMPSON, M. O

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Raman Scattering near the Tricritical Point in SbSI von Peercy, P. S.

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Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation von PEERCY, P. S, TSAO, J. Y, STIFFLER, S. R, THOMPSON, M. O

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Crystallization instability at the amorphous-silicon/liquid-silicon interface von TSAO, J. Y, PEERCY, P. S

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Stability of strained quantum-well field-effect transistor structures von Peercy, P.S., Dodson, B.W., Tsao, J.Y., Jones, E.D., Myers, D.R., Zipperian, T.E., Dawson, L.R., Biefeld, R.M., Klem, J.F., Hills, C.R.

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Measurement of the Velocity of the Crystal-Liquid Interface in Pulsed Laser Annealing of Si von Galvin, G. J., Thompson, M. O., Mayer, J. W., Hammond, R. B., Paulter, N., Peercy, P. S.

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Plasma hydrogenation of thin film SiO2 on Si von STEIN, H. J, PEERCY, P. S

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Rapid solidification studies of a model alloy system von THOMPSON, M. O, PEERCY, P. S, TSAO, J. Y, AZIZ, M. J

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The effects of ion-implantation damage on the first-order Raman spectra of GaP von MYERS, D. R, GOURLEY, P. L, PEERCY, P. S

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Effects of As impurities on the solidification velocity of Si during pulsed laser annealing von PEERCY, P. S, THOMPSON, M. O, TSAO, J. Y

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Melt dynamics of silicon-on-sapphire during pulsed laser annealing von Thompson, M O, Galvin, G J, Mayer, J W, Peercy, P S, Hammond, R B

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Structural integrity of ion-implanted In0.2Ga0.8As/GaAs strained-layer superlattice von ARNOLD, G. W, PICRAUX, S. T, PEERCY, P. S, MYERS, D. R, DAWSON, L. R

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Phase selection during pulsed laser annealing of manganese von FOLLSTAEDT, D. M, PEERCY, P. S, PEREPEZKO, J. H

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