Neutron irradiation effects in high electron mobility transistors von Bongim Jun, Subramanian, S., Peczalski, A.

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Piezoelectrically Transduced Temperature-Compensated Flexural-Mode Silicon Resonators von Thakar, V. A., Zhengzheng Wu, Peczalski, A., Rais-Zadeh, M.

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Influence of Air Temperature and Humidity on Dehydration Equilibria and Kinetics of Theophylline von Touil, Amira, Peczalski, Roman, Timoumi, Souad, Zagrouba, Fethi

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Piezoelectrically transduced high-Q silica micro resonators von Zhengzheng Wu, Peczalski, A., Thakar, V. A., Zongliang Cao, Yi Yuan, Guohong He, Peterson, R. L., Najafi, K., Rais-Zadeh, M.

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RF/analog/digital SOI technology for GPS receivers and other systems on a chip von Peczalski, A.

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Charge-collection mechanisms of heterostructure FETs von McMorrow, D., Melinger, J.S., Thantu, N., Campbell, A.B., Weatherford, T.R., Knudson, A.R., Lan Hu Tran, Peczalski, A.

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Magnetoelectronic reconfigurable logic von Peczalski, A., Berndt, D., Sandquist, D.

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Micro-wheels for attitude control and energy storage in small satellites von Peczalski, A., Elgersma, M., Dan Quenon, Jacobs, J.

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Sun oriented and powered, 3 axis and spin stabilized CubeSats von Falbel, G., Puig-Suari, J., Peczalski, A.

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Military/civilian mixed-mode Global Positioning System (GPS) receiver (MMGR) von Peczalski, A., Kriz, J., Carlson, S.G., Sampson, S.J.

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Modeling frequency dependence of GaAs MESFET characteristics von Conger, J., Peczalski, A., Shur, M.S.

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Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer von Marshall, P.W., Dale, C.J., Weatherford, T., Carts, M., McMorrow, D., Peczalski, A., Baier, S., Nohava, J., Skogen, J.

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Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer von McMorrow, D., Weatherford, T.R., Knudson, A.R., Buchner, S., Melinger, J.S., Lan Hu Tran, Campbell, A.B., Marshall, P.W., Dale, C.J., Peczalski, A., Baier, S.

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Heavy ion and proton analysis of a GaAs C-HIGFET SRAM von Cutchin, J.H., Marshall, P.W., Weatherford, T.R., Langworthy, J., Petersen, E.L., Campbell, A.B., Hanka, S., Peczalski, A.

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Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs von Byun, Y.H., Shur, M.S., Peczalski, A., Schuermeyer, F.L.

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Power law GaAs MESFET model von Conger, J., Shur, M.S., Peczalski, A.

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Trapping-enhanced temperature variation of the threshold voltage of GaAs MESFET's von Chung-Hsu Chen, Shur, M., Peczalski, A.

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Subthreshold current ion GaAs MESFETs von Conger, J., Peczalski, A., Shur, M.S.

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Physical SEU model for circuit simulations von Peczalski, A., Bergman, J., Berndt, D., Lai, J.C.

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Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICE von Hyun, C.H., Shur, M.S., Peczalski, A.

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