Schottky contacts on sulfurized silicon carbide (4H-SiC) surface von Roccaforte, Fabrizio, Vivona, Marilena, Panasci, Salvatore Ethan, Greco, Giuseppe, Fiorenza, Patrick, Sulyok, Attila, Koos, Antal, Pecz, Bela, Giannazzo, Filippo

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In situ TEM study of κ→β and κ→γ phase transformations in Ga2O3 von Cora, I., Fogarassy, Zs, Fornari, R., Bosi, M., Rečnik, A., Pécz, B.

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Realization of Vertical and Zigzag Single Crystalline Silicon Nanowire Architectures von Sivakov, V. A, Brönstrup, G, Pecz, B, Berger, A, Radnoczi, G. Z, Krause, M, Christiansen, S. H

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The real structure of epsilon -Ga2O3 and its relation to Kappa -phase von Cora, Ildiko, Mezzadri, Francesco, Boschi, Francesco, Bosi, Matteo, Caplovicova, Maria, Calestani, Gianluca, Dodony, Istvan, Pecz, Bela, nari, Roberto

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Indium Nitride at the 2D Limit von Pécz, Béla, Nicotra, Giuseppe, Giannazzo, Filippo, Yakimova, Rositsa, Koos, Antal, Kakanakova‐Georgieva, Anelia

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CVT and PVT growth and characterization of GaS crystals von Attolini, Giovanni, Negri, Marco, Besagni, Tullo, Pecz, Bela, Cora, Ildiko

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Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates von Alshahed, Muhammad, Heuken, Lars, Alomari, Mohammed, Cora, Ildiko, Toth, Lajos, Pecz, Bela, Wachter, Clemens, Bergunde, Thomas, Burghartz, Joachim N.

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2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface von Sfuncia, Gianfranco, Nicotra, Giuseppe, Giannazzo, Filippo, Pécz, Béla, Gueorguiev, Gueorgui Kostov, Kakanakova-Georgieva, Anelia

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Graphene integration with nitride semiconductors for high power and high frequency electronics von Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, R., Dagher, R., Michon, A., Cordier, Y.

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Electrochemical corrosion and electrochemical migration characteristics of SAC-1Bi-xMn solder alloys in NaCl solution von Medgyes, Bálint, Gharaibeh, Ali, Harsányi, Gábor, Pécz, Béla, Felhősi, Ilona

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Thermal stability of ε-Ga2O3 polymorph von Fornari, R., Pavesi, M., Montedoro, V., Klimm, D., Mezzadri, F., Cora, I., Pécz, B., Boschi, F., Parisini, A., Baraldi, A., Ferrari, C., Gombia, E., Bosi, M.

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Thermal DLTS study of the defect states of PELLE polymer von Rusnák, Jaroslav, Pecz, Michal, Škoviera, Ján, Klbik, Ivan

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Targeting Mitochondrial Dysfunction with L-Alpha Glycerylphosphorylcholine von Strifler, Gerda, Tuboly, Eszter, Görbe, Anikó, Boros, Mihály, Pécz, Daniella, Hartmann, Petra

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Diamond-Graphene Composite Nanostructures von Németh, Péter, McColl, Kit, Smith, Rachael L, Murri, Mara, Garvie, Laurence A. J, Alvaro, Matteo, Pécz, Béla, Jones, Adrian P, Corà, Furio, Salzmann, Christoph G, McMillan, Paul F

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Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure von Maidebura, Y.E., Mansurov, V.G., Malin, T.V., Smirnov, A.N., Zhuravlev, K.S., Pecz, B.

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Diffusion in GaN/AlN superlattices: DFT and EXAFS study von Aleksandrov, Ivan A., Malin, Timur V., Zhuravlev, Konstantin S., Trubina, Svetlana V., Erenburg, Simon B., Pecz, Bela, Lebiadok, Yahor V.

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Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 von Schilirò, E., Panasci, S.E., Mio, A.M., Nicotra, G., Agnello, S., Pecz, B., Radnoczi, G.Z., Deretzis, I., La Magna, A., Roccaforte, F., Lo Nigro, R., Giannazzo, F.

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Material proposal for 2D indium oxide von Kakanakova-Georgieva, Anelia, Giannazzo, Filippo, Nicotra, Giuseppe, Cora, Ildikó, Gueorguiev, Gueorgui K., Persson, Per O.Å., Pécz, Béla

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Atomic layer deposited Fe-sulfide layers with pyrrhotite structure controlled by the deposition temperature von Baji, Zsófia, Pécz, Béla, Fogarassy, Zsolt, Szabó, Zoltán, Cora, Ildikó

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Semitransparent and conductive CaSi2 films for silicon device applications von Galkin, Nikolay G, Galkin, Konstantin N, Tupkalo, Andrei V, Chusovitin, Evgenii A, Goroshko, Dmitrii L, Fogarassi, Z, Pecz, B

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