Valence and conduction band offsets in AZO/Ga2O3 heterostructures von Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

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Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3 von Polyakov, A.Y., Vasilev, A.A., Shchemerov, I.V., Chernykh, A.V., Shetinin, I.V., Zhevnerov, E.V., Kochkova, A.I., Lagov, P.B., Miakonkikh, A.V., Pavlov, Yu.S., Kobets, U.A., Lee, In-Hwan, Kuznetsov, A., Pearton, S.J.

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Hydrogen detection using platinum coated graphene grown on SiC von Chu, Byung Hwan, Lo, C.F., Nicolosi, Justin, Chang, C.Y., Chen, Victor, Strupinski, W., Pearton, S.J., Ren, F.

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ZnO: growth, doping & processing von Norton, D.P., Heo, Y.W., Ivill, M.P., Ip, K., Pearton, S.J., Chisholm, M.F., Steiner, T.

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Dislocations introduced in n-GaN at room temperature cause conductivity inversion von Yakimov, Eugene B., Vergeles, Pavel S., Polyakov, Alexander Y., Shchemerov, Ivan V., Chernyh, A.V., Vasilev, A.A., Kochkova, A.I., Lee, In-Hwan, Pearton, S.J.

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Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN von Polyakov, A.Y., Smirnov, N.B., Yakimov, E.B., Tarelkin, S.A., Turutin, A.V., Shemerov, I.V., Pearton, S.J., Bae, Kang-Bin, Lee, In-Hwan

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Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks von Kim, Hyonwoong, Lim, Wantae, Lee, Jae-Hoon, Pearton, S.J., Ren, F., Jang, Soohwan

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ZnO Doped With Transition Metal Ions von Pearton, Stephen J., Norton, David P., Ivill, Matt P., Hebard, Art F., Zavada, John M., Chen, Weimin M., Buyanova, Irina A.

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Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions von Hays, David C., Gila, B.P., Pearton, S.J., Thorpe, Ryan, Ren, F.

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Fabrication and performance of GaN electronic devices von Pearton, S.J., Ren, F., Zhang, A.P., Lee, K.P.

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High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition von Socol, G., Craciun, D., Mihailescu, I.N., Stefan, N., Besleaga, C., Ion, L., Antohe, S., Kim, K.W., Norton, D., Pearton, S.J., Galca, A.C., Craciun, V.

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Advances in ZnO-based materials for light emitting diodes von Pearton, S.J, Ren, F.

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Growth and Characterization of GaN Nanowires for Hydrogen Sensors von Johnson, Jason L., Choi, Yongho, Ural, Ant, Lim, Wantae, Wright, J.S., Gila, B.P., Ren, F., Pearton, S.J.

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Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors von Wang, Yu-Lin, Chu, B.H., Chang, C.Y., Lo, C.F., Pearton, S.J., Dabiran, A., Chow, P.P., Ren, F.

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Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection von Kang, B.S., Kim, S., Ren, F., Gila, B.P., Abernathy, C.R., Pearton, S.J.

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AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress von Douglas, E.A., Chang, C.Y., Cheney, D.J., Gila, B.P., Lo, C.F., Lu, Liu, Holzworth, R., Whiting, P., Jones, K., Via, G.D., Kim, Jinhyung, Jang, Soohwan, Ren, Fan, Pearton, S.J.

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ZnO and Related Materials for Sensors and Light-Emitting Diodes von Pearton, S.J., Lim, W.T., Wright, J.S., Tien, L.C., Kim, H.S., Norton, D.P., Wang, H.T., Kang, B.S., Ren, F., Jun, J., Lin, J., Osinsky, A.

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Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas von Shin, J.Y., Choi, K.H., Noh, K.H., Park, D.K., Sohn, K.Y., Cho, G.S., Song, H.J., Lee, J.W., Pearton, S.J.

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A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 von Jang, Soohwan, Jung, Sunwoo, Beers, Kimberly, Yang, Jiancheng, Ren, Fan, Kuramata, A., Pearton, S.J., Baik, Kwang Hyeon

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Indium zinc oxide thin films deposited by sputtering at room temperature von Lim, Wantae, Wang, Yu-Lin, Ren, F., Norton, D.P., Kravchenko, I.I., Zavada, J.M., Pearton, S.J.

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