Internal laser characteristics of optically pumped yellow-orange lasers von Alyamani, Ahmed, Lutsenko, Evgenii V., Gronin, Sergey V., Vainilovich, Aliaksei G., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Tarasuk, Nikolai P., Aljohani, Maher, Aljariwi, Abdulaziz, Sorokin, Sergey V., Sedova, Irina V., Ivanov, Sergey V.

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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure von Vainilovich, Aliaksei G., Lutsenko, Evgenii V., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Alyamani, Ahmed, Aljohani, Maher, Aljariwi, Abdulaziz, Gronin, Sergey V., Sorokin, Sergey V., Sedova, Irina V., Ivanov, Sergey V.

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Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2 von Lutsenko, Evgenii V., Rzheutski, Mikalai V., Pavlovskii, Viacheslav N., Muravitskaya, Elena V., Yablonskii, Gennadii P., Mauder, Christof, Reuters, Ben, Kalisch, Holger, Heuken, Michael, Vescan, Andrei

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3 epilayers von Lutsenko, Evgenii V., Rzheutski, Mikalai V., Zubialevich, Vitalii Z., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Shulenkov, Alexei S., Reklaitis, Ignas, Kadys, Arūnas, Malinauskas, Tadas, Nargelas, Saulius, Jarašiūnas, Kęstutis, Žukauskas, Artūras

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Internal parameters and optical properties of green II-VI heterostructure lasers with active region composed of multi-sheet electronically-coupled CdSe quantum dots von Vainilovich, Aliaksei G., Lutsenko, Evgenii V., Tarasuk, Nikolai P., Pavlovskii, Viacheslav N., Gurskii, Aliaksandr L., Yablonskii, Gennadii P., Sedova, Irina V., Sorokin, Sergey V., Gronin, Sergey V., Ivanov, Sergey V., Kop'ev, Pyotr S.

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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure: Microchip laser converter based on LD and QD heterostructure von Vainilovich, Aliaksei G., Lutsenko, Evgenii V., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Alyamani, Ahmed, Aljohani, Maher, Aljariwi, Abdulaziz, Gronin, Sergey V., Sorokin, Sergey V., Sedova, Irina V., Ivanov, Sergey V.

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Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode von Lutsenko, Evgenii V., Sorokin, Sergey V., Sedova, Irina V., Vainilovich, Aliaksei G., Tarasuk, Nikolai P., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Gronin, Sergey V., Kop'ev, Pyotr S., Ivanov, Sergey V.

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Temperature-resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO sub(2) von Lutsenko, Evgenii V, Rzheutski, Mikalai V, Pavlovskii, Viacheslav N, Muravitskaya, Elena V, Yablonskii, Gennadii P, Mauder, Christof, Reuters, Ben, Kalisch, Holger, Heuken, Michael, Vescan, Andrei

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Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO 2 von Lutsenko, Evgenii V., Rzheutski, Mikalai V., Pavlovskii, Viacheslav N., Muravitskaya, Elena V., Yablonskii, Gennadii P., Mauder, Christof, Reuters, Ben, Kalisch, Holger, Heuken, Michael, Vescan, Andrei

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers von Lutsenko, Evgenii V., Rzheutski, Mikalai V., Zubialevich, Vitalii Z., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Shulenkov, Alexei S., Reklaitis, Ignas, Kadys, Arūnas, Malinauskas, Tadas, Nargelas, Saulius, Jarašiūnas, Kęstutis, Žukauskas, Artūras

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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al sub(2)O sub(3) epilayers von Lutsenko, Evgenii V, Rzheutski, Mikalai V, Zubialevich, Vitalii Z, Pavlovskii, Viacheslav N, Yablonskii, Gennadii P, Shulenkov, Alexei S, Reklaitis, Ignas, Kadys, Arunas, Malinauskas, Tadas, Nargelas, Saulius, Jarasiunas, Kstutis, ukauskas, Arturas

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Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode von LUTSENKO, Evgenii V, SOROKIN, Sergey V, SEDOVA, Irina V, VAINILOVICH, Aliaksei G, TARASUK, Nikolai P, PAVLOVSKII, Viacheslav N, YABLONSKII, Gennadii P, GRONIN, Sergey V, KOP'EV, Pyotr S, IVANOV, Sergey V

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High optical gain InGaN/GaN MQW electroluminescent heterostructures grown on silicon by MOCVD von Lutsenko, E.V., Tarasuk, N.P., Vainilovich, A.G., Danilchyk, A.V., Pavlovskii, V.N., Yablonskii, G.P., Kalisch, H., Jansen, R.H., Behmenburg, H., Dikme, Y.I., Schineller, B., Heuken, M.

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