On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications - part I: transistor DC design considerations von Cressler, John D, Comfort, James H, Crabbe, Emmanuel F, Patton, Gary L, Stork, Johannes M C, Sun, Jack Y-C, Meyerson, Bernard S

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Current gain rolloff in graded-base SiGe heterojunction bipolar transistors von Crabbe, E.F., Cressler, J.D., Patton, G.L., Stork, J.M., Comfort, J.H., Sun, J.Y.-C.

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Structure and morphology of polycrystalline silicon-single crystal silicon interfaces von BRAVMAN, J. C, PATTON, G. L, PLUMMER, J. D

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Heterojunction bipolar transistors using Si-Ge alloys von Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S., Harame, D.L.

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75-GHz fT SiGe-base heterojunction bipolar transistors von PATTON, G. L, COMFORT, J. H, MEYERSON, B. S, CRABBE, E. F, SCILLA, G. J, DE FRESART, E, STORK, J. M. C, SUN, J. Y.-C, HARAME, D. L, BURGHARTZ, J. N

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Spirituality assessment in health care von Patton, Gary L

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SiGe heterojunctions: devices and applications von Arienzo, Maurizio, Comfort, James H., Crabbé, Emmanuel F., Harame, David L., Iyer, Subramanian S., Kesan, Vijay P., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C., Sun, Yuan-Chen

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Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy von Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., Stork, J.M.C.

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Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors von Patton, G.L., Bravman, J.C., Plummer, J.D.

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Discontinuous Innovation: Strained Silicon Technology von Patton, G.L.

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Graded-SiGe-base, poly-emitter heterojunction bipolar transistors von Patton, G.L., Harame, D.L., Stork, J.M.C., Meyerson, B.S., Scilla, G.J., Ganin, E.

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SiGe alloys: growth, properties and applications von Arienzo, Maurizio, Iyer, Subramanian S., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C.

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Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors von Cressler, J.D., Comfort, J.H., Crabbe, E.F., Patton, G.L., Lee, W., Sun, J.Y., Stork, J.M.C., Meyerson, B.S.

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Si Ge alloys: growth, properties and applications von Arienzo, Maurizio, Iyer, Subramanian S., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C.

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Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology von Burghartz, J.N., Comfort, J.H., Patton, G.L., Meyerson, B.S., Sun, J.Y.-C., Stork, J.M.C., Mader, S.R., Stanis, C.L., Scilla, G.J., Ginsberg, B.J.

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Coping with the career: a review of acquired life patterns of veteran officers von Patton, Gary L

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Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing von PATTON, GARY L, KOBEDA, EDWARD

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Complementary transistor structure and method for manufacture von STORK, JOHANNES M.C, HARAME, DAVID L, PATTON, GARY L

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Self-aligned epitaxial base transistor and method for fabricating same von BASSOUS, ERNEST, STORK, JOHANNES M.C, PATTON, GARY L

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Method for fabricating self-aligned epitaxial base transistor von PATTON, GARY L, STORK, JOHANNES M. C, BASSOUS, ERNEST

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