Electron traps in InGaP grown by gas source molecular beam epitaxy von KIM, H. S, HAFICH, M. J, PATRIZI, G. A, NANDA, A, VOGT, T. J, WOODS, L. M, ROBINSON, G. Y

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Photoluminescence and interface abruptness in InGaAsP/InGaAsP quantum wells von WOODS, L. M, SILVESTRE, P, THIAGARAJAN, P, PATRIZI, G. A, ROBINSON, G. Y, JONES, K. M, AL-JASSIM, M

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Poly-Silicon Based Latching RF MEMS Switch von Nordquist, C.D., Baker, M.S., Kraus, G.M., Czaplewski, D.A., Patrizi, G.A.

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Timing of events in STEMI patients treated with immediate PCI or standard medical therapy: Implications on optimisation of timing of treatment from the CARESS-in-AMI trial von Dimopoulos, Konstantinos, Dudek, Dariusz, Piscione, Federico, Mielecki, Waldemar, Savonitto, Stefano, Borgia, Francesco, Murena, Ernesto, Manari, Antonio, Gaspardone, Achille, Ochala, Andrzej, Zmudka, Krzysztof, Bolognese, Leonardo, Steg, Philippe Gabriel, Flather, Marcus, Di Mario, Carlo

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Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs von NANDA, A, HAFICH, M. J, VOGT, T. J, WOODS, L. M, PATRIZI, G. A, ROBINSON, G. Y

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Experimental Study of Defect Formations in GaAs Devices Using Gain, Photoluminescence and Deep Level Transient Spectroscopy von Bielejec, E., Vizkelethy, G., Fleming, R. M., Serkland, D. K., McDonald, J. K., Patrizi, G. A., King, D. B.

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RF MEMS Switches With \hbox - \hbox Contacts Cycled to 10 Billion Cycles von Czaplewski, D. A., Nordquist, C. D., Patrizi, G. A., Kraus, G. M., Cowan, W. D.

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Continuous distribution of defect states and band gap narrowing in neutron irradiated GaAs von Fleming, R. M., Lang, D. V., Seager, C. H., Bielejec, E., Patrizi, G. A., Campbell, J. M.

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On-site phosphine purification for gas-source MBE of InGaAlP von Hafich, M.J., Woods, L.M., Kim, H.S., Patrizi, G.A., Robinson, G.Y.

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(Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs von Baca, Albert G., Kotobi, Joshua A., Fortune, Torben R., Gorenz, Alan, Klem, John F., Briggs, Ronald D., Clevenger, J. B., Patrizi, Gary A.

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A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs von Baca, Albert G, Scruggs, Andrew J., Gorenz, Alan, Fortune, Torben R., Klem, John F., Briggs, Ronald D., Clevenger, Jascinda B., Patrizi, Gary A., Sullivan, Charles T.

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Thin-film tantalum-nitride resistor technology for phosphide-based optoelectronics von Lovejoy, M.L., Patrizi, G.A., Roger, D.J., Barbour, J.C.

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Low-power modular parallel photonic data links von Carson, R.F., Lovejoy, M.L., Lear, K.L., Warren, M.E., Seigal, P.K., Patrizi, G.A., Kilcoyne, S.P., Craft, D.C.

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Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors von Clevenger, Jascinda B., Patrizi, Gary, Peterson, Tracy, Cich, Michael, Baca, Albert, Klem, John, Plut, Thomas, Fortune, Torben, Hightower, Michael, Torres, David, Hawkins, Samuel, Sullivan, Charles

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Wannier–Stark localization in a strained-layer In x Ga1− x As/In y Ga1− y P superlattice von Kim, J. W., Lee, Y. J., Vogt, T. J., Patrizi, G. A., Robinson, G. Y., Lile, D. L.

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A new wafer-level packaging technology for MEMS with hermetic micro-environment von Chanchani, R., Nordquist, C. D., Olsson, Roy H., Peterson, T., Shul, R., Ahlers, C., Plut, T. A., Patrizi, G. A.

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Optical transitions in strained In1− x Ga x As y P1− y quantum wells clad by lattice-matched barriers of InGaAsP von Jiang, X. P., Thiagarajan, P., Patrizi, G. A., Robinson, G. Y., Temkin, H., Forouhar, S., Vandenberg, J. M., Coblentz, D., Logan, R. A.

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Multi-level interconnects for heterojunction bipolar transistor integrated circuit technologies von Patrizi, Gary A., Lovejoy, Michael L., Enquist, Paul M., Schneider, Richard P., Hou, Hong Q.

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On-site phosphine purificatin for gas-source MBE of InGaAlP von HAFICH, M. J, WOODS, L. M, KIM, H. S, PATRIZI, G. A, ROBINSON, G. Y

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Ultra-low-power, long-wavelength photoreceivers for massively-parallel optical data links von Lovejoy, M.L., Patrizi, G.A., Enquist, P.M., Carson, R.F., Craft, D.C., Shul, R.J.

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